Electron spin resonance of [111], [111], and [111] oriented dangling orbital Pb0 defects at the (111) Si/SiO2 interface

Stesmans, A.
April 1986
Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p972
Academic Journal
The observation of (111) Si/SiO2 interface Pb0 defects (modeled as 0Si≡Si3) with dangling bonds positioned along [111], [111], and [111] from low-temperature (T<=30 K) electron spin resonance measurements is reported. This is connected with the particular structure (SiOx) of the attendant very near-Si interfacial transition region for the oxidation method invoked. Some instructive information as to the precise atomic modeling of the Si/SiO2 interface is inferred.


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