Chloride vapor phase epitaxial growth of a Ga0.52In0.48P/GaAs heterostructure with an abrupt heterointerface

Hoshino, Masataka; Kodama, Kunihiko; Kitahara, Kuninori; Komeno, Junji; Ozeki, Masashi
April 1986
Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p983
Academic Journal
Chloride vapor phase epitaxy of Ga0.52In0.48P/GaAs was studied using a reactor with two growth chambers. We have obtained high-purity epitaxial layers of both GaInP and GaAs. For the growth of a heterostructure with an abrupt interface, the optimum growth condition was investigated in detail. Abruptness of the heterointerface was investigated by observing the two-dimensional electron gas at the heterointerface of Ga0.52In0.48P/GaAs by the Hall and Shubnikov–de Haas measurements.


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