Low-temperature annealed contacts to very thin GaAs epilayers

Patrick, W.; Mackie, W. S.; Beaumont, S. P.; Wilkinson, C. D. W.
April 1986
Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p986
Academic Journal
A low-temperature annealing process has been developed for the fabrication of low resistivity ohmic contacts to very thin (<0.2 μm) n+ GaAs epilayers. It is shown that by altering the relative amounts of Ni in the commonly used AuGe/Ni/Au contact system, the anneal temperature can be reduced from the standard 420–450 °C to 320 °C or less without deterioration in specific contact resistance. The specific contact resistances were evaluated using the modified transmission line model.


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