TITLE

Metastability and polarization effects in a pn heterojunction device due to deep states

AUTHOR(S)
Stavola, Michael; Capasso, F.; Nabity, J. C.; Alavi, K.; Cho, A. Y.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p997
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Unusual metastable and polarization behavior has been observed for Al0.48In0.52As/ Ga0.47In0.53As avalanche photodiodes by capacitance spectroscopy. The metastability arises from interplay of the heterojunction barrier with defects in the Al0.48In0.52As layer. Defect occupation controls the reverse bias characteristics of the device while the heterojunction presents a barrier to carrier capture by the defects.
ACCESSION #
9819550

 

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