Frequency and power limit of quantum well oscillators

Jogai, B.; Wang, K. L.; Brown, K. W.
April 1986
Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p1003
Academic Journal
The maximum frequency at which amplification can be obtained from quantum well oscillators is discussed. Intrinsically, the frequency limit for having negative differential resistance (NDR) can be very high, of the order of the inverse of the electron transit time. Owing to the large capacitance of the well and barrier regions, the actual frequency limit at which amplification occurs may be lower than the intrinsic limit because of the capacitance charging time. We have estimated the frequency limit of NDR by considering the electron transit time and have calculated the maximum oscillation frequency from an equivalent circuit model. We have also obtained an expression for the high-frequency power output as a function of frequency, based on a transmission line model.


Related Articles

  • Electro-absorptive properties of interdiffused in GaAsP/InP quantum wells. Li, E. Herbert; Choy, Wallace C.H. // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p3861 

    Studies the effects of Group III and Group V interdiffusions with a varied as-grown well width and P concentration in the quaternary InGaAsP quantum well material. Features of multiple mini-well profiles; Interdiffusion of the Group III elements with a well width of 10nm; Electro-absorptive...

  • A study of GaAs/AIGaAs p-type quantum well infrared photodetectors with different barrier... Liu, H.C.; Li, L.; Buchanan, M.; Wasilewski, Z. R.; Brown, G. J.; Szmulowicz, F.; Hegde, S. M. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p585 

    Studies a set of GaAs/AIGaAs p-type quantum well infrared photodetectors with varying barrier heights. Experimental procedure used; Definition of the samples used in the study; Results of the findings.

  • Comparison of band-filling and gain models for multiple-quantum-well lasers. Heinamaki, A.; Tulkki, J. // Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3268 

    Investigates the effects of the overlap factor and the band-filling model on the gain of quantum well lasers. Energy bands in multiple-quantum-well structure; Quasi-Fermi energies; Material gain; Conduction and valence band; Gain calculations; Threshold current.

  • Refractive index of interdiffused AlGaAs/GaAs quantum well. Li, E. Herbert // Journal of Applied Physics;12/15/1997, Vol. 82 Issue 12, p6251 

    Analyzes a refractive index of interdiffused AlGaAs/GaAs quantum well. Definition of the theoretical model; Results and discussion of the analysis.

  • Investigation of L-related indirect transitions in GaAs/GaAlAs multiquantum wells under... Dai, N.; Huang, D. // Journal of Applied Physics;12/15/1997, Vol. 82 Issue 12, p6359 

    Investigates the L-related indirect transitions in GaAs/GaAlAs multiquantum wells under hydrostatic pressure. Characteristics of the semiconductor quantum wells (QWs);

  • Spatially resolved near-field spectroscopy on localized GaInAsP/InP double heterostructures. Barenz, J.; Anger, P.; Hollricher, O.; Marti, O.; Wachter, M.; Butendeich, R.; Heinecke, H. // Journal of Applied Physics;1/15/1998, Vol. 83 Issue 2, p870 

    Evaluates band-gap variations on selective grown Ga...In...-...As...P... multiple quantum wells (MQW, Q1.05) using near-field optical microscopy. Investigation of transitions; Advantage of measurements on the cleaved side; Information regarding the mechanical setup of the near-field optical...

  • A carrier escape study from InP/InGaAs single quantum well solar cells. Epler, J.; Pate, M.; Zachariou, A.; Barnes, J.; Barnham, K. W. J.; Nelson, J.; Tsui, E. S. M. // Journal of Applied Physics;1/15/1998, Vol. 83 Issue 2, p877 

    Looks at a carrier escape study from InP/AlGaAs single quantum well structures. Indications of the photoluminescence from the InGaAs wells; Use of an estimated nonradiative efficiency of the device; Insight on the relevance to an application.

  • Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular... Hamdani, F.; Yeadon, M.; Smith, David J.; Tang, H.; Kim, W.; Salvador, A.; Botchkarev, A. E.; Gibson, J. M.; Polyakov, A. Y.; Skowronski, M.; Morkoç, H. // Journal of Applied Physics;1/15/1998, Vol. 83 Issue 2, p983 

    Investigates nonuniform vertical charge transport and relaxation in quantum well infrared detectors studied at different bias and frequency ranges. Experimental techniques used on multiquantum well (MQW) structures; Information on temperature dependence of capacities and resistance for a 4 and...

  • Semiconductor device generates terahertz radiation.  // Laser Focus World;Feb95, Vol. 31 Issue 2, p11 

    Reports that difference-frequency mixing in GaAs/GaAlAs multiple quantum wells has been used to produce 12 uW power at an output wavelength of 118 um. Description of a semiconductor mixer device used in the experiment.

  • Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors. Wang, S.Y.; Lee, C.P. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2680 

    Studies 8-12 mum InGaAs/GaAs quantum well infrared photodetectors with two different well doping concentrations. Comparison with normal incident operation; Absorption ratio; Doping density increases.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics