TITLE

Amorphous silicon p-i-n-i-p and n-i-p-i-n diodes

AUTHOR(S)
Dresner, Joseph
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p1006
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter describes the preparation and electrical characteristics of a-Si:H p-i-n-i-p and n-i-p-i-n thin-film diodes suitable for driving monochrome liquid crystal displays with more than 500 lines. The symmetrical current-voltage curves in the reverse breakdown regime can be described by i=i0 exp(E/E0), where E0[bar_over_tilde:_approx._equal_to]9×104 V/cm. In the range 20–125 °C, the current is thermally activated with an energy of 0.25 eV. The response time to applied voltage pulses is ≤10 μs. The stability of the electrical characteristics is adequate for at least 104 h of operation in a liquid crystal display. Electrical characteristics indicate that the reverse breakdown current is a tunneling current injected into the i layer and that electrons are likely to be dominant.
ACCESSION #
9819545

 

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