Proton isolated In0.2Ga0.8As/GaAs strained-layer superlattice avalanche photodiode

Bulman, G. E.; Myers, D. R.; Zipperian, T. E.; Dawson, L. R.
April 1986
Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p1015
Academic Journal
We have fabricated the first proton isolated strained-layer superlattice (SLS) avalanche photodiode. The grown In0.2Ga0.8As/GaAs p+n SLS structure was bombarded outside the active region with 220 keV protons to a total dose of 1×1015cm-2. These first nonoptimized devices exhibit a breakdown voltage of 23.5 V with a dark current density of 1.3×10-3A/cm2 at 90% of the breakdown voltage. The isolation is stable under annealing for 10 min at 350 °C. Uniform photoresponse is observed across the active region with two order of magnitude reduction in response occurring in the isolation region. A peak uncoated external quantum efficiency of 25% at 910 nm is observed with 10 V reverse bias and photocurrent multiplication is observed at higher bias values. These results demonstrate that proton isolation can be successfully applied to strained-layer systems and can be incorporated in useful device structures.


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