Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing

Gronet, C. M.; Sturm, J. C.; Williams, K. E.; Gibbons, J. F.; Wilson, S. D.
April 1986
Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p1012
Academic Journal
Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron-doped regions were fabricated in situ. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of the p+ epitaxial films are comparable to bulk material.


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