TITLE

Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing

AUTHOR(S)
Gronet, C. M.; Sturm, J. C.; Williams, K. E.; Gibbons, J. F.; Wilson, S. D.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p1012
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron-doped regions were fabricated in situ. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of the p+ epitaxial films are comparable to bulk material.
ACCESSION #
9819519

 

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