TITLE

High performance GaInAsSb/GaSb p-n photodiodes for the 1.8–2.3 μm wavelength range

AUTHOR(S)
Srivastava, A. K.; DeWinter, J. C.; Caneau, C.; Pollack, M. A.; Zyskind, J. L.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaInAsSb/GaSb p-n heterojunction photodiodes prepared by liquid phase epitaxy are described. The low net acceptor concentration obtained by Te compensation of the quaternary layer permits a room-temperature external quantum efficiency of 67±5% to be achieved at a wavelength of 2.2 μm.
ACCESSION #
9819508

 

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