High performance GaInAsSb/GaSb p-n photodiodes for the 1.8–2.3 μm wavelength range

Srivastava, A. K.; DeWinter, J. C.; Caneau, C.; Pollack, M. A.; Zyskind, J. L.
April 1986
Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p903
Academic Journal
GaInAsSb/GaSb p-n heterojunction photodiodes prepared by liquid phase epitaxy are described. The low net acceptor concentration obtained by Te compensation of the quaternary layer permits a room-temperature external quantum efficiency of 67±5% to be achieved at a wavelength of 2.2 μm.


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