Mechanism for the threshold voltage shift of a GaAs field-effect transistor around dislocations

Miyazawa, Shintaro; Wada, Kazumi
April 1986
Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p905
Academic Journal
The effect of gate-to-pit distance on threshold votlage for GaAs field-effect transistors was examined in detail for the area around dislocated ‘‘lineage’’ boundaries. From this investigation, a clear dislocation proximity effect is recognized. The most possible mechanism for threshold voltage shift is presented referring to the EL2 concentration increase at lineage and the model for EL2 formation previously reported. This model proposes the increase in As-interstitial concentration around dislocations, leaving a region of increased [VGa]/[VAs] ratio, is responsible for the threshold voltage shift.


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