TITLE

Hydrogenation of the ‘‘new oxygen donor’’ traps in silicon

AUTHOR(S)
Hölzlein, K.; Pensl, G.; Schulz, M.; Johnson, N. M.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p916
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrogenation was performed at moderate temperatures (≤300 °C) on Czochralski-grown Si samples that contained high concentrations of the oxygen-related ‘‘new donor’’ (ND) traps. From deep level transient spectroscopy, a comparison of spectra from untreated reference and hydrogenated material reveals that two different types of defect states contribute to the continuous energy distribution of the ND traps. The experimental and theoretical results further establish the ‘‘SiOx interface’’ model for the ND defects.
ACCESSION #
9819497

 

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