Temperature-dependent pinning at the Al/n-GaAs(110) interface

Kendelewicz, T.; Williams, M. D.; Chin, K. K.; McCants, C. E.; List, R. S.; Lindau, I.; Spicer, W. E.
April 1986
Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p919
Academic Journal
It is shown that at the Al/n-GaAs(110) interface grown in ultrahigh vacuum at -80 °C the Fermi level remains unpinned at least up to a 3 monolayer coverage. In contrast, at room temperature the pinning near midgap is established after a deposition of approximately 1 monolayer of Al. The low-temperature behavior is correlated with the growth of a more uniform overlayer which inhibits cluster and defect formation. This result provides a critical test of models of Schottky barrier formation.


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