Device quality AlGaAs/GaAs heterostructures grown in a multichamber organometallic vapor phase epitaxial apparatus

Shealy, J. R.
April 1986
Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p925
Academic Journal
The use of a vertical multichamber organometallic vapor phase epitaxial (OMVPE) reactor for the growth of compound semiconductors is described. The formation of abrupt AlGaAs/GaAs heterostructures has been achieved by positioning the substrates by rotation in growth zones with the appropriate combinations of the sources; trimethylgallium, trimethylaluminum, and arsine. Photoluminescence, Raman spectroscopy, and cross-sectional transmission electron microscopy are used to demonstrate the optical quality and structural properties of the epitaxial films produced by this variation of the OMVPE technique. Device quality films are demonstrated by the fabrication of all superlattice separate confining laser structures emitting over the wavelength range from 740 to 855 nm.


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