TITLE

Observations on intensity oscillations in reflection high-energy electron diffraction during epitaxial growth of Si(001) and Ge(001)

AUTHOR(S)
Aarts, J.; Gerits, W. M.; Larsen, P. K.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p931
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Intensity oscillations have been found in the specular beam of reflection high-energy electron diffraction patterns during growth of Si(001) and Ge(001) by molecular beam epitaxy. The reported results demonstrate the dependence of the amplitude and damping of the oscillations on different parameters such as substrate temperature, electron beam angle of incidence, and azimuth.
ACCESSION #
9819488

 

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