High-energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1-x barriers (hω>=EL, EX)

Hsieh, K. C.; Kaliski, R. W.; Holonyak, N.; Burnham, R. D.; Thornton, R. L.; Paoli, T. L.
April 1986
Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p943
Academic Journal
Data are presented showing that a small GaAs quantum well (Lz≊80 Å), the middle third of which is replaced with a (Si2)x(GaAs)1-x ‘‘barrier’’ (27 Å, x>=0.2), is capable of stimulated emission (77 K) at energies hω>=EL(Si+GaAs), EX(Si+GaAs).


Related Articles

  • Fabrication of GaAs fine stripe structures by selective metalorganic chemical vapor deposition.... Yamaguchi, Ko-ichi; Okamoto, Kotaro // Applied Physics Letters;12/30/1991, Vol. 59 Issue 27, p3580 

    Examines the use of diethylgalliumchloride in selective metalorganic chemical vapor deposition in gallium arsenide fine stripe fabrication. Method use in the fabrication of quantum well wires; Effects temperature decrease on reactant species surface concentration; Crystal-orientation...

  • Electrical characterization of partially relaxed In[sub x]Ga[sub 1-x]As/GaAs multiple quantum.... Moon, C.R.; In Kim // Applied Physics Letters;6/16/1997, Vol. 70 Issue 24, p3284 

    Investigates the electronic properties of In[sub x]Ga[sub 1-x]As/GaAs multiple quantum well (MQW) structures. Growth of MQW samples by chemical vapor deposition; Presence of the dislocation-related electron traps in MQW samples; Application of the x-ray diffraction technique to characterize MQW...

  • Lateral interface mixing in GaAs quantum well wire arrays. Fukui, Takashi; Saito, Hisao; Tokura, Yasuhiro // Applied Physics Letters;11/6/1989, Vol. 55 Issue 19, p1958 

    GaAs quantum well wires with an (AlGaAs)1/2(GaAs)1/2 fractional-layer superlattice(FLS) are fabricated on slightly misoriented (001)GaAs substrates by metalorganic chemical vapor deposition. Transmission electron microscope images show clear contrast for the GaAs quantum wire array, although the...

  • Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells. Manasreh, M. O.; Friedman, D. J.; Ma, W. Q.; Workman, C. L.; George, C. E.; Salamo, G. J. // Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p514 

    Photoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition on semi-insulating GaAs substrates were measured at 77 K for several samples grown with different In compositions and dimethylhydrazine (DMH)/III ratios....

  • Carrier trapping in room-temperature, time-resolved photoluminescence of a GaAs/AlxGa1-xAs multiple quantum well structure grown by metalorganic chemical vapor deposition. Fouquet, J. E.; Siegman, A. E.; Burnham, R. D.; Paoli, T. L. // Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p374 

    The time decay of the room-temperature photoluminescence from the n = 1 transition in a multiple quantum well structure grown by metalorganic chemical vapor deposition is observed to depend strongly on excitation energy density. For low excitation (0.2 µJ/cm²) an exponential 3-ns decay is...

  • Low loss InGaAs/InP multiple quantum well waveguides. Koren, U.; Miller, B. I.; Koch, T. L.; Boyd, G. D.; Capik, R. J.; Soccolich, C. E. // Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1602 

    Double heterostructure planar waveguides with an InGaAs/InP multiple quantum well (MQW) core and InP cladding layers were grown by atmospheric pressure metalorganic chemical vapor deposition. Ridge waveguides had a low propagation loss of 0.8 dB/cm for 1.52 μm input light. The indices of...

  • Current confinement in a GaAs/AlGaAs heterostructure by in situ laser-patterned desorption of a current-blocking quantum well. Epler, J. E.; Treat, D. W.; Paoli, T. L. // Applied Physics Letters;5/7/1990, Vol. 56 Issue 19, p1828 

    Radiation from Ar+ and Nd:YAG lasers is used within a metalorganic chemical vapor deposition reactor to thermally desorb selected areas of GaAs quantum well (QW) layers during a pause in the epitaxial growth. The process, called laser-patterned desorption, is used to laterally pattern current...

  • Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasers. Hummel, S. G.; Beyler, C. A.; Zou, Y.; Grodzinski, P.; Dapkus, P. D. // Applied Physics Letters;8/13/1990, Vol. 57 Issue 7, p695 

    Tertiarybutylarsine was used in the growth of GaAs and AlGaAs by metalorganic chemical vapor deposition over a range of compositions and V/III ratios. GaAs layers were obtained with both n- and p-type background carrier concentrations in the low 1014 cm-3 range. AlGaAs was grown at 20, 30, and...

  • Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor deposition. Feketa, D.; Chan, K. T.; Ballantyne, J. M.; Eastman, L. F. // Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1659 

    A graded-index separate-confinement strained-layer quantum well laser with pseudomorphic Ga0.63In0.37As quantum well was grown by metalorganic chemical vapor deposition. The lasing wavelength is 0.99 μm at 300 K and the average threshold current density of broad area 146×363 μm devices...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics