Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography

Kakuchi, Masami; Hikita, Makoto; Tamamura, Toshiaki
March 1986
Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p835
Academic Journal
We propose the application of carbon films as resist masks for practical nanometer lithography involving reactive ion etching (RIE). Amorphous carbon films prepared by room-temperature plasma chemical vapor deposition show a very high resistance against RIE, the etching rates being less than 1/2 of that of a novolak-based conventional photoresist. The carbon films can be finely patterned by O2 RIE in a bilayer resist process using a high-resolution silicone-based negative resist. Nanometer patterns as small as 40 nm are fabricated on a thick solid substrate, and can be transferred into the substrate layer directly by RIE.


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