Recrystallization of amorphous silicon film by tungsten halogen lamp annealing

Arai, Hitoshi; Nakazawa, Kenji; Kohda, Shigeto
March 1986
Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p838
Academic Journal
The transformation of amorphous silicon films to polycrystalline materials induced by tungsten halogen lamp annealing has been studied by x-ray diffraction and transmission electron microscopy. Tungsten halogen lamp annealing shortens annealing time, requiring only 1/10– 1/100 the time needed to grow the same size grains as by furnace annealing. Isochronal annealing by a tungsten halogen lamp reveals that the activation energy for grain growth is 0.64 eV, while that by furnace annealing is 0.23 eV. The cause of this difference is not clear; however the nucleation and following recrystallization process at low temperatures are found to depend on the heating rate and annealing time.


Related Articles

  • Thermal stability of sputtered copper films containing dilute insoluble tungsten: Thermal annealing study. C. H. Lin; J. P. Chu; Mahalingam, T.; T. N. Lin; S. F. Wang // Journal of Materials Research;Jun2003, Vol. 18 Issue 6, p1429 

    Presents a study which described the thermal annealing behavior of copper (Cu) films. Experimental details; Effects of thermal annealing on crystallographic features of Cu-tungsten film; Diffusion mechanism of Cu and silicon.

  • Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment. Cho, M.-H.; Chung, K. B.; Whang, C. N.; Ko, D.-H.; Lee, J. H.; Lee, N. I. // Applied Physics Letters;5/15/2006, Vol. 88 Issue 20, p202902 

    The characteristics of nitrided HfO2 films suggest that the diffusion of Si from the Si substrate to the film surface is induced by annealing in an NH3 ambient and that the incorporation of N is closely related to the diffusion of Si. Changes in the core-level energy state of the N 1s peaks of...

  • Multilevel construction of seeded-laterally epitaxial silicon films on insulator. Hamasaki, T.; Inoue, T.; Yoshimi, M.; Yoshii, T.; Tango, H. // Journal of Applied Physics;7/1/1987, Vol. 62 Issue 1, p126 

    Proposes a seed structure known as partially thickened silicon films on insulator (SOI) for multilevel seeded-laterally epitaxial silicon films on insulator. Dynamic simulation of recrystallization process; Overview of the SOI recrystallization process; Description of the bumpy surfaces...

  • A heat transfer algorithm for the laser-induced melting and recrystallization of thin silicon layers. Grigoropoulos, Costas P.; Buckholz, Richard H.; Domoto, Gerald A. // Journal of Applied Physics;10/1/1986, Vol. 60 Issue 7, p2304 

    Presents information on a study which described some numerical calculations for the temperature fields associated with laser melting and subsequent recrystallization of a thin silicon film on a conductive glass substrate. Sketch of the silicon layer and the substrate structure; Calculations...

  • Activation mechanism of implanted boron in a Si substrate. Juang, M. H.; Cheng, H. C. // Journal of Applied Physics;12/1/1992, Vol. 72 Issue 11, p5190 

    Examines the recrystallization and dopant activation in the positive boron-fluorine samples implanted into a silicon substrate and annealed with different heating rates to various preset temperatures for zero holding time. Influences of heating rate for various annealing cases; Possible...

  • Doping effects in zone-melting recrystallization of silicon thin films. Lee, Si-Woo; Joo, Seung-Ki // Journal of Applied Physics;6/1/1995, Vol. 77 Issue 11, p6000 

    Presents information on a study which investigated the effects of dopant additions on interface stability in zone-melting recrystallization (ZMR) of silicon thin films, through computer simulation and experiments. Advantages of the silicon-on-insulator structure; Interface stability analysis;...

  • Recrystallization and magnetic properties of purified 3% silicon steels. Ishiyama, K.; Arai, K. I.; Honda, T. // Journal of Applied Physics;11/15/1991, Vol. 70 Issue 10, p6262 

    Investigates the effect of impurities on the tertiary recrystallization and magnetic properties of the thin silicon steels. Dependence of magnetic induction and coercive force on annealing time; Relationship between annealing temperature and the Î’[sub8] of the sample; Dependence of the...

  • A comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II. Pai, C. S.; Lau, S. S.; Poker, D. B.; Hung, L. S. // Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4178 

    Presents a study which compared thermal annealing and ion mixing of multilayered nickel-tungsten films on silicon. Method of the study; Results and discussion; Conclusion.

  • Fatigue behavior of the electric pulse induced reversible resistance change effect in AgLa0.7Ca0.3MnO3Pt sandwich. Dong, R.; Wang, Q.; Chen, L.; Chen, T.; Li, X. // Applied Physics A: Materials Science & Processing;2005, Vol. 80 Issue 1, p13 

    La0.7Ca0.3MnO3 (LCMO) films were prepared by a chemical solution deposition method on a Pt/Si substrate. Reversible resistance switching by electric pulses is observed in Ag/LCMO/Pt sandwich structures. This R switching behavior shows fatigue with time and applied pulse number. The voltage...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics