In situ investigation of the nucleation of microcrystalline Si

Collins, R. W.
March 1986
Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p843
Academic Journal
In situ ellipsometry experiments have been used to probe the structural changes that occur in the initial stages of the growth of microcrystalline silicon ( μc-Si) on single-crystal Si substrates. The initial nucleation of μc-Si appears to occur at well-dispersed sites and ∼100 Å of material with significantly different optical properties than the bulk is buried at the film/substrate interface. The different optical structure of this interface layer is attributed to voids which are trapped when crystalline nuclei merge. These results are contrasted with recent data for hydrogenated amorphous silicon which show that nuclei converge after about 50 Å, leaving material with bulklike optical properties at the substrate interface.


Related Articles

  • Ellipsometry studies of Si/Ge superlattices with embedded Ge dots. Kalem, Şeref; Arthursson, Örjan; Werner, Peter // Applied Physics A: Materials Science & Processing;Sep2013, Vol. 112 Issue 3, p555 

    In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SLs) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SLs which were grown...

  • FTIR Ellipsometry of SiC Heterostructures. Pezoldt, Jörg // AIP Conference Proceedings;11/1/2010, Vol. 1292 Issue 1, p83 

    The present work demonstrates the applicability of FTIR-ellipsometry to determine vibrational properties and stress distributions in thin and ultra thin 3C-SiC heteroepitaxial layers grown on Si(111) and Si(100) substrates. Additionally, they are compared to the properties of hexagonal SiC...

  • Defect reduction and improved gettering in CZ single-crystal silicon. Furuya, Hisashi; Harada, Kazuhiro; Park, Jea-Gun // Solid State Technology;Jun2001, Vol. 44 Issue 6, p109 

    Describes the concept, quality and gettering ability of conventional Czochralski (CZ) silicon. Types of grown-in defects formed in CZ silicon single crystals; Particles and contamination in pure silicon; Conclusion.

  • Ultrasoft X-ray Spectroscopy Investigation of the Model System Si–SiO[sub 2]. Kozhakhmetov, S. K. // Journal of Experimental & Theoretical Physics;May2000, Vol. 90 Issue 5, p823 

    SiO[sub 2] surface films with different thicknesses (ranging from 20 to 630 Ã…), grown on a crystal silicon substrate, have been investigated by the method of reflection and scattering of ultrashoft X-rays. It is shown on the basis of a simultaneous analysis of the SiL[sub 2, 3] reflection...

  • Controlled sublimation growth of single crystalline 4H-SiC and 6H-SiC and identification of... Kanaya, Masatoshi; Takahashi, Jun; Fujiwara, Yuichiro; Moritani, Akihiro // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p56 

    Reports on polytype-controlled crystal growth of silicon carbide (SiC) carried out by using a sublimation method. X-ray diffraction pattern of SiC.

  • Demonstration of laser-assisted epitaxial deposition of Ge[sub x]Si[sub 1-x] alloys on... Lombardo, S.; Smith, Paul Martin // Applied Physics Letters;4/22/1991, Vol. 58 Issue 16, p1768 

    Discusses the initial results of a novel technique for epitaxial growth of Ge[sub x]Si[sub 1-x] alloys on single-crystal silicon. Melting and crystallization of the amorphous layer after electron beam deposition; Melt duration versus energy density in single-crystal silicon.

  • Low-defect colorless Bi[sub 12]SiO[sub 20] grown by hydrothermal techniques. Harris, Meckie T.; Larkin, John J. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2162 

    Investigates the growth of bismuth silicon oxide (BSO) crystals using the pressure-balanced hydrothermal technique. Absence of the deep-donor absorption shoulder in the undoped crystals; Use of BSO for optical signal processing; Factors attributed to the photochromic response and TSC signals in...

  • Novel seeding method for growth of polycrystalline Si films with hemispherical grains. Sakai, Akira; Tatasumi, Toru // Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p159 

    Presents a method of growing polycrystalline silicon films with hemispherical grains. Application of the films to high storage electrodes for dynamic random access memory; Demonstration of the grain size distribution precise control of the hemispherical-grained polycrystalline silicon (HSG-Si)...

  • Nonlinear analysis of complexities in striations of Czochralski silicon crystals. Miyano, Takaya; Shintani, Akira // Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3574 

    Investigates the complexities in striations of Czochralski silicon crystals. Use of neural networks and nonlinear regression analysis; Predictability of the two categories of the time series of striations along the crystal growth axis; Existence of underlying nonlinear dynamics common to the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics