In situ investigation of the nucleation of microcrystalline Si

Collins, R. W.
March 1986
Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p843
Academic Journal
In situ ellipsometry experiments have been used to probe the structural changes that occur in the initial stages of the growth of microcrystalline silicon ( μc-Si) on single-crystal Si substrates. The initial nucleation of μc-Si appears to occur at well-dispersed sites and ∼100 Å of material with significantly different optical properties than the bulk is buried at the film/substrate interface. The different optical structure of this interface layer is attributed to voids which are trapped when crystalline nuclei merge. These results are contrasted with recent data for hydrogenated amorphous silicon which show that nuclei converge after about 50 Å, leaving material with bulklike optical properties at the substrate interface.


Related Articles

  • Ellipsometry studies of Si/Ge superlattices with embedded Ge dots. Kalem, Şeref; Arthursson, Örjan; Werner, Peter // Applied Physics A: Materials Science & Processing;Sep2013, Vol. 112 Issue 3, p555 

    In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SLs) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SLs which were grown...

  • FTIR Ellipsometry of SiC Heterostructures. Pezoldt, Jörg // AIP Conference Proceedings;11/1/2010, Vol. 1292 Issue 1, p83 

    The present work demonstrates the applicability of FTIR-ellipsometry to determine vibrational properties and stress distributions in thin and ultra thin 3C-SiC heteroepitaxial layers grown on Si(111) and Si(100) substrates. Additionally, they are compared to the properties of hexagonal SiC...

  • Growth of 6H and 4H silicon carbide single crystals by the modified Lely process utilizing a dual-seed crystal method. Heydemann, V. D.; Schulze, N.; Barrett, D. L.; Pensl, G. // Applied Physics Letters;12/9/1996, Vol. 69 Issue 24, p3728 

    The influence of polarity on the SiC crystal growth has been demonstrated using a dual-seed technique to grow on both the C- and Si-face seed simultaneously. For the investigated range of growth conditions, 4H-SiC crystals were grown on the C-face of 6H-SiC seed crystals with on-axis...

  • Near-equilibrium growth of micropipe-free 6H-SiC single crystals by physical vapor transport. Schulze, N.; Barrett, D. L.; Pensl, G. // Applied Physics Letters;3/30/1998, Vol. 72 Issue 13 

    A process for growing micropipe-free single crystals has been developed by using the modified Lely method. The process parameters were kept close to thermal equilibrium. The maximum average thermal gradient inside the growth furnace leading to micropipe-free growth was 5 K/cm. A gradient of 7.5...

  • Controlled sublimation growth of single crystalline 4H-SiC and 6H-SiC and identification of... Kanaya, Masatoshi; Takahashi, Jun; Fujiwara, Yuichiro; Moritani, Akihiro // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p56 

    Reports on polytype-controlled crystal growth of silicon carbide (SiC) carried out by using a sublimation method. X-ray diffraction pattern of SiC.

  • Nonlinear analysis of complexities in striations of Czochralski silicon crystals. Miyano, Takaya; Shintani, Akira // Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3574 

    Investigates the complexities in striations of Czochralski silicon crystals. Use of neural networks and nonlinear regression analysis; Predictability of the two categories of the time series of striations along the crystal growth axis; Existence of underlying nonlinear dynamics common to the...

  • Structural and optical characterization of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth. Ababou, Y.; Desjardins, P.; Chennouf, A.; Leonelli, R.; Hetherington, D.; Yelon, A.; L’Espérance, G.; Masut, R. A. // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p4997 

    Deals with a study which assessed heteroepitaxial InP layers on silicon metalorganic vapor phase epitaxy using thermal cycle growth. Experimental details; Results; Discussion and conclusions.

  • Demonstration of laser-assisted epitaxial deposition of Ge[sub x]Si[sub 1-x] alloys on... Lombardo, S.; Smith, Paul Martin // Applied Physics Letters;4/22/1991, Vol. 58 Issue 16, p1768 

    Discusses the initial results of a novel technique for epitaxial growth of Ge[sub x]Si[sub 1-x] alloys on single-crystal silicon. Melting and crystallization of the amorphous layer after electron beam deposition; Melt duration versus energy density in single-crystal silicon.

  • Defect reduction and improved gettering in CZ single-crystal silicon. Furuya, Hisashi; Harada, Kazuhiro; Park, Jea-Gun // Solid State Technology;Jun2001, Vol. 44 Issue 6, p109 

    Describes the concept, quality and gettering ability of conventional Czochralski (CZ) silicon. Types of grown-in defects formed in CZ silicon single crystals; Particles and contamination in pure silicon; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics