Physical processes in degradation of amorphous Si:H

Redfield, David
March 1986
Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p846
Academic Journal
A critical analysis is given of possible mechanisms of light-induced degradation in amorphous Si:H (a-Si:H) and of the constraints imposed on degradation models by recent experimental observations. Using an analogy with processes in recombination-enhanced degradation of GaAs, it is shown that current intrinsic models for a-Si:H are deficient in two significant respects. It is also found that these intrinsic models cannot explain several important observations. An alternative extrinsic model is shown to be free of these deficiencies.


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