TITLE

Physical processes in degradation of amorphous Si:H

AUTHOR(S)
Redfield, David
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p846
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A critical analysis is given of possible mechanisms of light-induced degradation in amorphous Si:H (a-Si:H) and of the constraints imposed on degradation models by recent experimental observations. Using an analogy with processes in recombination-enhanced degradation of GaAs, it is shown that current intrinsic models for a-Si:H are deficient in two significant respects. It is also found that these intrinsic models cannot explain several important observations. An alternative extrinsic model is shown to be free of these deficiencies.
ACCESSION #
9819445

 

Related Articles

  • Studies on electrical switching behavior of As-Te-Tl glasses — effect of local structure on switching type and composition dependence of switching voltages. Sharmila, B. H.; Asokan, S. // Applied Physics A: Materials Science & Processing;Feb2006, Vol. 82 Issue 2, p345 

    Bulk As-Te-Tl glasses belonging to the As30Te70-xTlx (4≤x≤22) and As40Te60-xTlx (5≤x≤20) composition tie lines are studied for their I–V characteristics. Unlike other As-Te-III glasses such as As-Te-Al and As-Te-In, which exhibit threshold behavior, the present...

  • Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials. Jihoon Choi; Hyun Seok Lee; Taek Sung Lee; Suyoun Lee; Won Mok Kim; Donghwan Kim; Byung-ki Cheong // Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p081905 

    To better understand the role of nitrogen (N) during crystallization of Sb-rich phase change materials, a study was conducted using Sb and Sb70Te30 as host materials of N. Crystallization of the as-sputtered Sb–N films of varying N content was examined to reveal that Sb–N bonds are...

  • Deterioration of aluminum induced crystallization of sputtered silicon by film stress. Ching-Ming Hsu; Ming-Chang Yu // Journal of Materials Science Letters;Aug2003, Vol. 22 Issue 15, p1079 

    Investigates the crystallization tendency of amorphous silicon with film stress. Suggestion that thermal energy was consumed to induce stress release before the aluminum-induced crystallization process came to effect, resulting in the deterioration of aluminum-induced crystallization effect for...

  • Disordering and the electronic transport behaviors of NbC—Al4C3—C composite. Li, D.; Ma, S.; Li, W. F.; Wu, B.; Zhang, Z. D. // Journal of Materials Science;Aug2007, Vol. 42 Issue 16, p6929 

    A composite nanomaterial composed of NbC nanocrystals, Al4C3 nanorods and carbon nanofibers as well as amorphous carbon was fabricated by arc-discharging a Nb3Al block as an anode in CH4 gas. The growth process of the NbC–Al4C3–C composite was deduced according to the...

  • Study on thermal stability of electroless deposited Ni-Co-P alloy thin film. Kumar, Anuj; Singh, Amanpal; Kumar, Mukesh; Kumar, Dinesh; Barthwal, Sumit // Journal of Materials Science: Materials in Electronics;Sep2011, Vol. 22 Issue 9, p1495 

    The Ni-P and Ni-Co-P alloy thin films were deposited on silicon substrates with electroless technique. The solid state metallurgical reactions were investigated with silicon for the viewpoint of Co co-deposition effect. The alloy film kept amorphous state with increasing Co content even though...

  • Comment on “Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases” [J. Appl. Phys. 97, 093509 (2005)]. Tanaka, K. // Journal of Applied Physics;1/15/2007, Vol. 101 Issue 2, p026111 

    We point out an ambiguity made in interpreting the so-called photoconductivity spectrum, Fig. 5 in a paper by Lee et al. [J. Appl. Phys. 97, 093509 (2005)], which is found also in other studies on small-gap amorphous semiconductors.

  • A hydrogen pathway for electronic processes in amorphous silicon. Singh, A. // Journal of Materials Science;Jan2003, Vol. 38 Issue 1, p51 

    The characteristic difference in the diamagnetic fractions of hydrogen in doped and undoped amorphous hydrogenated silicon (a-Si : H), as obtained through MuSR modelling, is investigated by first reviewing recent calculations of the electronic energies of interstitial hydrogen. This results...

  • Hydrogenated amorphous silicon for archival storage. McLeod, R. D.; Pries, W.; Card, H. C.; Kao, K. C. // Applied Physics Letters;1984, Vol. 45 Issue 6, p628 

    Changes in optical reflectivity of hydrogenated amorphous silicon films of up to 90% have been induced by Ar laser processing, and are correlated with hydrogen evolution from the material. Accompanying changes greater than three orders of magnitude in resistivity also provide a mechanism for...

  • A Review on Progress of Amorphous and Microcrystalline Silicon Thin-Film Solar Cells. Kabir, Mohammed I.; Ibarahim, Zahari; Sopian, Kamaruzzaman; Amin, Nowshad // Recent Patents on Electrical Engineering;Jan2011, Vol. 4 Issue 1, p50 

    This paper describes the continuous progress of amorphous (a-Si:H) and microcrystalline (µc-Si:H) silicon based thin film solar cells and discusses its present scenarios based on patents and open reviews. The efficiency of hydrogenated amorphous silicon (a-Si:H) thin film solar cells has...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics