Selectively buried epitaxial growth of GaAs by metalorganic chemical vapor deposition

Okamoto, Kotaro; Yamaguchi, Ko-ichi
March 1986
Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p849
Academic Journal
Selectively buried epitaxial growth of GaAs was attempted by metalorganic chemical vapor deposition using SiO2 films and W/SiO2 films as mask materials. Lateral supply of reactant species from mask areas to grooves occurred, which brought about the dependences of growth rate upon the width and the depth of grooves and produced swells near the groove edges. By use of W/SiO2 masks patterned narrower than 40 μm, grooves were selectively buried by epitaxial layers without accompanying polycrystal deposition on the masks.


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