TITLE

Selectively buried epitaxial growth of GaAs by metalorganic chemical vapor deposition

AUTHOR(S)
Okamoto, Kotaro; Yamaguchi, Ko-ichi
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p849
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Selectively buried epitaxial growth of GaAs was attempted by metalorganic chemical vapor deposition using SiO2 films and W/SiO2 films as mask materials. Lateral supply of reactant species from mask areas to grooves occurred, which brought about the dependences of growth rate upon the width and the depth of grooves and produced swells near the groove edges. By use of W/SiO2 masks patterned narrower than 40 μm, grooves were selectively buried by epitaxial layers without accompanying polycrystal deposition on the masks.
ACCESSION #
9819443

 

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