Stacking and layer disordering of AlxGa1-xAs-GaAs quantum well heterostructures

Meehan, K.; Hsieh, K. C.; Costrini, G.; Kaliski, R. W.; Holonyak, N.; Coleman, J. J.
March 1986
Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p861
Academic Journal
Data are presented showing that an AlxGa1-x As-GaAs quantum well heterostructure (QWH) or superlattice (SL) can be selectively disordered into higher gap bulk crystal by impurity (Si) diffusion and then have grown epitaxially on it (‘‘stacked’’ on it) another SL (or QWH), which can be subjected to further impurity-induced layer disordering in a patterned form. The resulting three-dimensional array can be operated as a photopumped laser.


Related Articles

  • Microcrystal growth of GaAs on a Se-terminated GaAlAs surface for the quantum-well box.... Chikyow, Toyohiro; Koguchi, Nobuyuki // Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2431 

    Demonstrates growth of gallium arsenide microcrystals on a selenium (Se)-terminated gallium aluminum arsenide (GaAlAs) surface for quantum-well box fabrication. Purpose of supplying Ga molecules to Se-terminated GaAlAs surface; Formation of Ga droplets; List of essential factors in the droplet...

  • Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire. Jmerik, V. N.; Mizerov, A. M.; Sitnikova, A. A.; Kop'ev, P. S.; Ivanov, S. V.; Lutsenko, E. V.; Tarasuk, N. P.; Rzheutskii, N. V.; Yablonskii, G. P. // Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p141112 

    We report on AlGaN multiple-quantum-well separate confinement laser heterostructures grown by plasma-assisted molecular-beam epitaxy directly on c-sapphire at low temperatures (<800 °C). Threading dislocation density was reduced down to 109–1010 cm-2 owing to both intentionally...

  • Growth temperature dependent radiative relaxation in AlGaAs/GaAs multiple quantum wells. Matsueda, Hideaki; Hara, Kiyoaki // Applied Physics Letters;7/24/1989, Vol. 55 Issue 4, p362 

    Decay times of photoexcited electrons in AlGaAs/GaAs multiple quantum wells are evaluated using a time-correlated photon counting method. The decay time was observed to increase with crystal growth temperature between 600 and 730 °C for metalorganic chemical vapor deposition. It also...

  • Visible-spectrum (lambda=650 nm) photopumped (pulsed, 300 K) laser operation of a.... Ries, M.J.; Holonyak, N. // Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1107 

    Examines the photothumped laser operation of quantum-well heterostructure (QWH) crystals through native oxide mirrors. Use of metalorganic chemical vapor deposition to fabricate QWH crystals on gallium arsenide substrate; Details on the emission spectrum of the quantum well; Correlation between...

  • GaN/Al[sub x]Ga[sub 1-x]N quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scale. Grandjean, N.; Massies, J. // Applied Physics Letters;8/31/1998, Vol. 73 Issue 9 

    GaN/Al[sub x]Ga[sub 1-x]N quantum wells (QWs) are grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. Both the Al composition and the well thickness are determined in situ from reflection high-energy electron diffraction intensity oscillations. It is demonstrated that MBE...

  • Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes. Li, D. Y.; Huang, Y. Z.; Zhu, J. J.; Zhao, D. G.; Liu, Z. S.; Zhang, S. M.; Ye, X. J.; Chong, M.; Chen, L. H.; Yang, H.; Liang, J. W. // Journal of Applied Physics;8/15/2006, Vol. 100 Issue 4, p046101 

    Time-resolved light-current curves, spectra, and far-field distributions of ridge structure InGaN multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. Results show that the thermal lensing effect...

  • Photoluminescence characteristics of 1.5-µm Ga1-xInxNyAs1-y/GaAs structures grown by molecular beam epitaxy. Sun, H.D.; Calvez, S.; Dawson, M.D.; Gilet, P.; Grenquillet, L.; Million, A. // Applied Physics A: Materials Science & Processing;2005, Vol. 80 Issue 1, p9 

    We report the photoluminescence characteristics of moIecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-µm wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample...

  • Optical Properties of Manufactured III-V's and II-VI's Short Wavelength Laser Structures. Stavrou, V. N.; Veropoulos, G. P.; Markopoulos, A. // Current Nanoscience;Aug2010, Vol. 6 Issue 4, p355 

    We focus on most commonly used epitaxial growth techniques of quantum wells (QWs) and study the single electron transitions within the QW laser structures made with II-VI's (e.g. CdSe/ZnSe) and III-V's (e.g. GaN/AlN), considering only emission of longitudinal optical (LO) phonons. Two different...

  • Morphology-Driven Stark Shift Switching In Ge/Si Type-II Heterointerfaces. Yasuyuki Miyake; Yuhsuke Yasutake; Susumu Fukatsu // Advanced Materials Research;2014, Issue 893, p39 

    Morphology-related anomaly was found in the photoluminescence (PL) of Ge/Si type-II double heterostructures with varying Ge coverage. PL Stokes shifts of 2-D Ge wetting layers functioning as a quantum well for holes switched from negative to positive under electric field as Ge coverage crossed...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics