Stacking and layer disordering of AlxGa1-xAs-GaAs quantum well heterostructures

Meehan, K.; Hsieh, K. C.; Costrini, G.; Kaliski, R. W.; Holonyak, N.; Coleman, J. J.
March 1986
Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p861
Academic Journal
Data are presented showing that an AlxGa1-x As-GaAs quantum well heterostructure (QWH) or superlattice (SL) can be selectively disordered into higher gap bulk crystal by impurity (Si) diffusion and then have grown epitaxially on it (‘‘stacked’’ on it) another SL (or QWH), which can be subjected to further impurity-induced layer disordering in a patterned form. The resulting three-dimensional array can be operated as a photopumped laser.


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