TITLE

Chloride vapor phase epitaxial growth of high-purity GaInP

AUTHOR(S)
Hoshino, Masataka; Kodama, Kunihiko; Kitahara, Kuninori; Ozeki, Masashi
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p770
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-purity GaInP alloy was grown by chloride vapor phase epitaxy (Ga/In/PCl3/H2 system) with two separate metal source regions. The alloy composition could be precisely controlled by using separate regions for Ga and In metals. From the photoluminescence and Hall effect analysis, epitaxial layers lattice matched to GaAs substrates showed high emission efficiency, the full width at half-maximum of the free-exciton luminescence was as narrow as 7.4 meV at 77 K (3.8 meV at 4.2 K), and the low impurity concentration was below 1.5×1015 cm-3.
ACCESSION #
9819396

 

Related Articles

  • Self-organization of GeAs nanodots in relaxed Si[sub 0.5]Ge[sub 0.5] alloys. Gaiduk, P. I.; Nylandsted Larsen, A.; Lundsgaard Hansen, J. // Applied Physics Letters;11/19/2001, Vol. 79 Issue 21, p3494 

    We report on the bimodal distribution and long-range ordering of GeAs nanodots obtained in strain-relaxed epitaxial Si[sub 0.5]Ge[sub 0.5] alloy layers after arsenic implantation and rapid thermal annealing. GeAs dots of two different average sizes around 15 and 55 nm are found after high...

  • Evidence of phase separation in cubic In[sub x]Ga[sub 1-x]N epitaxial layers by resonant Raman... Silveira, E.; Tabata, A. // Applied Physics Letters;12/6/1999, Vol. 75 Issue 23, p3602 

    Studies the evidence of phase separation in cubin InGaN epitaxial layers by resonant Raman scattering. Growth of alloy epilayers; Observation of compositional inhomogeneity.

  • Structure and magnetism of Co[sub 1-x]Mn[sub x] alloys epitaxially grown on GaAs(001). Wu, D.; Liu, G. L.; Jing, C.; Wu, Y. Z.; Dong, G. S.; Jin, X. F. // Journal of Applied Physics;1/1/2001, Vol. 89 Issue 1, p521 

    The structure and magnetism of Co[sub 1-x]Mn[sub x] films grown on GaAs(001) substrates were characterized by reflection high energy electron diffraction and magneto-optical Kerr effect measurements. It is found that the Co-rich and Mn-rich films exist in body-centered-cubic and...

  • Features of the twin structure of YBa[sub 2]Cu[sub 3]O[sub 7-x] epitaxial films. Bdikin, I. K.; Mashtakov, A. D.; Mozhaev, P. B.; Ovsyannikov, G. A. // Physics of the Solid State;Apr98, Vol. 40 Issue 4, p558 

    X-ray diffraction is used to investigate YBa[sub 2]Cu[sub 3]O[sub 7-x] (YBCO) films on NdGaO[sub 3](110) and a (100) CeO[sub 2]/(1&1macr;02) Al[sub 2]O[sub 3] heterostructure. Symmetric, asymmetric, and axial geometries for θ and θ/2θ scans are used to obtain diffraction spectra from...

  • Fabrication and Properties of Epitaxial Buffer Layers on Nonmagnetic Textured Ni Based Alloy Substrates. Celentano, G.; Boffa, V.; Ciontea, L.; Fabbri, F.; Galluzzi, V.; Mancini, A.; Petrisor, T.; Ceresara, S.; Scardi, P. // International Journal of Modern Physics B: Condensed Matter Phys;4/20/99, Vol. 13 Issue 9/10, p1029 

    Biaxially aligned YBCO thick films on oxide buffered metallic substrates is a promising route toward the fabrication of superconducting tapes operating at liquid nitrogen temperature. The role of buffer layer is to reduce the lattice mismatch between the substrate and the YBCO film, to adapt the...

  • Diamond Growth on Haynes 214 Alloy. Mihec, Damian F.; Sung Hyun Baek; Metson, James B. // International Journal of Modern Physics B: Condensed Matter Phys;4/10/2003, Vol. 17 Issue 8/9, p1170 

    A major target in diamond deposition is the growth of heteroepitaxial diamond films that are free from impurities, grain boundaries and defects for use in electronic applications. Nickel has been identified as a material with a close lattice match to diamond that minimises defect formation in...

  • Use of tertiarybutylarsine in atomic layer epitaxy and laser-assisted atomic layer epitaxy of.... Chen, Q.; Beyler, C.A. // Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2418 

    Investigates the use of trimethylgallium and tertiarybutylarsine (TBA) in atomic layer and laser-assisted atomic layer epitaxy of gallium arsenide (GaAs). Potential of TBA for arsine replacement to achieve monolayer self-limiting growth; Factors influencing the reduction of carbon contamination...

  • Low-temperature solid phase heteroepitaxial growth of Ge-rich Si[sub x]Ge[sub 1-x] alloys on.... Ma, Z.; Xu, Y. // Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p225 

    Investigates the process of germanium-rich silicon germanide alloys heteroepitaxial growth on silicon. Utilization of a low-temperature solid-phase heteroepitaxial growth technique in the study; Presence of stacking faults and microtwins on films grown on silicon; Growth of germanium...

  • Kinetics of solid phase epitaxial regrowth in amorphized Si[sub 0.88]Ge[sub 0.12] measured by.... Lee, C.; Haynes, T.E.; Jones, K.S. // Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p501 

    Measures the kinetics of solid phase epitaxial regrowth (SPER) during annealing of strained silicon[sub 0.88]germanium[sub 0.12] alloys. Use of time-resolved reflectivity technique; Amorphization of the epilayer by silicon implantation; Dependence of SPER velocity on interface position.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics