Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates

Ishiwara, Hiroshi; Tamba, Akihiro; Furukawa, Seijiro
March 1986
Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p773
Academic Journal
Lateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films onto nonplanar SiO2 patterns on Si(100) substrates was investigated. The patterns were formed by local oxidation of silicon (LOCOS) and the thickness of the SiO2 films ranged from 60 to 470 nm. The L-SPE characteristics similar to those for planar patterns were observed in dense a-Si films prepared by high-temperature vacuum deposition and subsequent ion implantation. The maximum L-SPE lengths onto the LOCOS patterns were 4.5, 6.5, and 44 μm in undoped, B-doped, and P-doped samples, respectively.


Related Articles

  • Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy. Honda, Y.; Kuroiwa, Y.; Yamaguchi, M.; Sawaki, N. // Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p222 

    The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO[sub 2] grid mask pattern. Within window regions of (0.2–0.5) mm×(0.2–0.5) mm, GaN films free from cracks were achieved. The full width at half maximum of the...

  • Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy. Kanjilal, A.; Hansen, J. Lundsgaard; Gaiduk, P.; Larsen, A. Nylandsted; Cherkashin, N.; Claverie, A.; Normand, P.; Kapelanakis, E.; Skarlatos, D.; Tsoukalas, D. // Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1212 

    A sheet of spherical, well-separated, crystalline Ge nanodots embedded in SiO[SUB2] on top of a p-(001)Si wafer was fabricated by molecular beam epitaxy (MBE) combined with rapid thermal processing and characterized structurally and electrically. The average size of the Ge nanodots was estimated...

  • Preferential nucleation along SiO2 steps in amorphous Si. Moniwa, M.; Miyao, M.; Tsuchiyama, R.; Ishizaka, A.; Ichikawa, M.; Sunami, H.; Tokuyama, T. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p113 

    Annealing characteristics for amorphous Si film deposited on an SiO[sub 2] layer were investigated with the hope that this would throw further light on aspects of solid phase epitaxy. Preferential nucleation, which initiated from the bottom region of deposited Si film, was found along SiO[sub 2]...

  • Two stages in the kinetics of gold cluster growth in ion-implanted silica during isothermal annealing in oxidizing atmosphere. De Marchi, G.; Mattei, G.; Mazzoldi, P.; Sada, C.; Miotello, A. // Journal of Applied Physics;10/15/2002, Vol. 92 Issue 8, p4249 

    The growth kinetics of gold clusters, formed by ion implantation in silica, is experimentally investigated. Isothermal sample annealing at 900 °C is performed in air atmosphere for increasing time intervals in the range between 0.5 and 12 h. Two different scaling laws of the cluster average...

  • Dislocation density reduction via lateral epitaxy in selectively grown GaN structures. Zheleva, Tsvetanka S.; Ok-Hyun Nam // Applied Physics Letters;10/27/1997, Vol. 71 Issue 17, p2472 

    Examines the microstructure and lateral epitaxy mechanism of homoepitaxially and selectively grown gallium nitride structures within silica masks. Use of transmission electron and scanning electron microscopy; Production of the structures for field emission studies; Dislocation density in the...

  • Epitaxial crystallization of keV-ion-bombarded α quartz. Roccaforte, F.; Bolse, W.; Lieb, K.-P. // Journal of Applied Physics;4/1/2001, Vol. 89 Issue 7 

    In this article, our results on the epitaxial crystallization of ion-bombarded crystalline silicon dioxide (α quartz) are reviewed. The epitaxial recrystallization of amorphized layers was achieved after alkali irradiation and annealing in air in the temperature range 650-875 °C. The...

  • Growth and Structure of Ge Nanoislands on an Atomically Clean Silicon Oxide Surface. Nikiforov, A.I.; Ul'yanov, V.V.; Pchelyakov, O.P.; Teys, S.A.; Gutakovski&icaron;, A.K. // Physics of the Solid State;Jan2004, Vol. 46 Issue 1, p77 

    Experimental data on the formation of self-organized Ge islands on an atomically clean oxidized Si(100) surface are presented. On the oxidized silicon surface, the Volmer–Weber growth mechanism is operative rather than the Stranski–Krastanow mechanism, which operates in the case of...

  • Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO[sub 2]-patterned vicinal (001) GaAs substrates. Kim, Hyo Jin; Motohisa, Junichi; Fukui, Takashi // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5147 

    We investigated the formation of In[sub 0.8]Ga[sub 0.2]As self-assembled quantum dots (SAQDs) grown on SiO[sub 2]-pattemed 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase epitaxy technique. The SiO[sub 2] patterns were filled with various stripe...

  • Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy. Chao, C. L.; Chiu, C. H.; Lee, Y. J.; Kuo, H. C.; Po-Chun Liu; Jeng Dar Tsay; Cheng, S. J. // Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p051905 

    This work proposes a method for fabricating 2 in. freestanding GaN substrates of high crystallographic quality and low residual strain. Arrays of GaN nanorods with sidewalls coated with silicon dioxide (SiO2) were randomly arranged on the sapphire substrate as a growth template for subsequent...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics