TITLE

Silicon surface roughness—Structural observation by reflection electron microscopy

AUTHOR(S)
Honda, Kouichirou; Ohsawa, Akira; Toyokura, Nobuo
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p779
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Surface roughness of polished silicon wafers was observed by reflection electron microscopy. Small steps were clearly resolved as fringe pattern, and rather rough steps of 1.2–1.6 nm in height and 200–500 nm in interval were observed as dark and bright bands. This is the first direct visualization of polished wafer surface roughness.
ACCESSION #
9819386

 

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