Microstructure of high-temperature annealed buried oxide silicon-on-insulator

Mao, B.-Y; Chang, P.-H.; Lam, H. W.; Shen, B. W.; Keenan, J. A.
March 1986
Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p794
Academic Journal
The microstructure of buried oxide silicon-on-insulator (SOI) annealed in the temperature range of 1150–1300 °C was examined. The microstructure of the buried oxide SOI was improved by increasing the annealing temperature. The minimum channeling yield of the top silicon layer in 1250 °C annealed SOI measured by Rutherford backscattering and channeling analysis is 5% which is comparable to unprocessed bulk single crystal material. This is further verified by the cross-sectional transmission electron microscopy observation of the precipitate-free top silicon layer with low dislocation density. The improvement in the microstructure is attributed to the dissolution of oxygen precipitates and oxygen outdiffusion during high-temperature annealing.


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