Quantum well AlxGa1-xAs-GaAs lasers with internal (Si2)x(GaAs)1-x barriers

Burnham, R. D.; Holonyak, N.; Hsieh, K. C.; Kaliski, R. W.; Nam, D. W.; Thornton, R. L.; Paoli, T. L.
March 1986
Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p800
Academic Journal
Data are presented showing that the alloy (Si2)x(GaAs)1-x can be formed in a GaAs quantum well (QW) and shifts the operation of an AlxGa1-xAs-GaAs QW laser to higher energy. The (Si2)x(GaAs)1-x barrier, which is formed by sheet deposition (metalorganic chemical vapor deposition) of Si on the initial portion of a GaAs QW layer and then by ‘‘capping’’ this with the remaining part of the QW, can be observed directly by transmission electron microscopy.


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