Transmission electron microscopy studies on lateral reaction of GaAs with Ni

Chen, S. H.; Carter, C. B.; Palmstro\m, C. J.; Ohashi, T.
March 1986
Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p803
Academic Journal
A method is described for preparing lateral Ni-GaAs diffusion couples for transmission electron microscopy (TEM) investigations. The diffusion couples are annealed in situ in a TEM using a hot stage. The growth of a ternary phase has been observed, and shows parabolic time dependence of the growth. At 200–300 °C, Ni is the predominant diffusion species while Ga and As are essentially immobile. The experimental results are compared with previous investigations of the reactions of Ni thin films with bulk GaAs.


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