Detection of Ga vacancies in electron irradiated GaAs by positrons

Hautojärvi, P.; Moser, P.; Stucky, M.; Corbel, C.; Plazaola, F.
March 1986
Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p809
Academic Journal
Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.


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