Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array

Lee, Y. H.; Warren, M.; Olbright, G. R.; Gibbs, H. M.; Peyghambarian, N.; Venkatesan, T.; Smith, J. S.; Yariv, A.
March 1986
Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p754
Academic Journal
Fast recovery (<200 ps) of an optical gate at room temperature in a GaAs étalon is observed by eliminating the top AlGaAs window and defining 9×9 μm2 pixels. This recovery time is at least an order of magnitude shorter than that for previous étalons consisting of AlGaAs/GaAs/AlGaAs heterostructures. The fast recovery is attributed to faster surface recombination of carriers at the GaAs-dielectric mirror interface as compared to that at a GaAs-AlGaAs interface.


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