Interaction of TiSi2 layers with polycrystalline Si

Zheng, L. R.; Hung, L. S.; Feng, S. Q.; Revesz, P.; Mayer, J. W.; Miles, G.
March 1986
Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p767
Academic Journal
Interactions of silicide films with undoped polycrystalline layers of Si grown by chemical vapor deposition at 630 °C were investigated by MeV He ion backscattering spectrometry, scanning electron microscopy, and transmission electron microscopy. For TiSi2, heat treatment in vacuum at temperatures above 850 °C results in erosion of the polycrystalline Si layer and growth of Si crystallites in the silicide film. The same phenomenon is observed for NiSi, Pd2Si, and CrSi2 at temperatures above one-half of melting point of the corresponding silicide.


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