Enhancement of the plasma density and deposition rate in rf discharges

Overzet, L. J.; Verdeyen, J. T.
March 1986
Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p695
Academic Journal
The peak and time averaged electron density in rf excited silane-helium mixtures increased significantly above the cw value by square wave modulating the source. The deposition rate of amorphous hydrogenated silicon films is also enhanced and apparently follows the electron density. Attachment to the discharge products appears to be responsible.


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