Dopant redistribution in silicon-on-sapphire films during thermal annealing

Cowern, N. E. B.; Yallup, K. J.; Godfrey, D. J.
March 1986
Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p704
Academic Journal
Arsenic depth distributions in silicon-on-sapphire films, after annealing at 900 °C for a range of times, have been studied by Rutherford backscattering and spreading resistance techniques. A continuum pipe diffusion model is developed which accounts satisfactorily for the rapid diffusion and segregation effects observed. In addition, the same model predicts two-dimensional dopant profiles with several novel features relevant to microelectronic device processing.


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