First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbands

Razeghi, M.; Duchemin, J. P.; Portal, J. C.; Dmowski, L.; Remeni, G.; Nicholas, R. J.; Briggs, A.
March 1986
Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p712
Academic Journal
Shubnikov–de Haas and quantum Hall effects have been studied in GaInAs-InP heterojunctions grown by modified low pressure metalorganic chemical vapor deposition. In contrast to the results reported up till now on GaInAs-InP heterojunctions with nearly the same channel electron density, not one but three electric subbands, E0, E1, and E2, are occupied in zero magnetic field. Two electric subbands E0 and E1 contribute to the quantum Hall effect. Magnetic depopulation of the higher (E1 and E2) subbands is observed in both perpendicular and tilted magnetic field orientations. This enables a demonstration of the importance of intersubband scattering in resistivity and cyclotron resonance.


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