TITLE

Recombination mechanisms in Si and Si thin films determined by picosecond reflectivity measurements near Brewster’s angle

AUTHOR(S)
Fauchet, P. M.; Nighan, W. L.
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p721
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A sensitive pump and probe method for measuring the transient carrier density in semiconductors is proposed and demonstrated in silicon. It relies on the magnified reflectivity changes when the picosecond probe laser is incident close to Brewster’s angle. We have measured the Auger recombination coefficient γ=2×10-31 cm6 s-1 and, in microcrystalline silicon films on insulator, the effective lifetime due to grain boundaries τ[bar_over_tilde:_approx._equal_to]100 ps. Additionally, at much higher pump energies, upon melting, the reflectivity jumps by nearly one order of magnitude.
ACCESSION #
9819295

 

Related Articles

  • Local activation energy and shape factor of current-voltage curve as investigation tools for semiconductor barrier structures. Popescu, Corneliu; Apetz, Rolf; Vescan, Lili // Journal of Applied Physics;11/15/1996, Vol. 80 Issue 10, p5791 

    Presents a study which examined the modeling of the I(V,T) dependence in thin film semiconductor structures. Discussion on the use of model equations and numerical procedure; Characteristic features of the equal recombination constants; Calculation of series resistance effects.

  • Recombination along the tracks of heavy charged particles in SiO2 films. Oldham, Timothy R. // Journal of Applied Physics;4/15/1985, Vol. 57 Issue 8, p2695 

    Presents information on a study which measured the recombination along the tracks of 2-megaelectronvolt alpha particles and 0.7-megaelectronvolt protons in thermally grown silicon dioxide thin films. Calculation of recombination of silicon dioxide; Experimental details; Results and discussion;...

  • Comparing retention and recombination of electrically injected carriers in Si quantum dots embedded in Si-rich SiNx films. Lin, Cheng-Dao; Cheng, Chih-Hsien; Lin, Yung-Hsiang; Wu, Chung-Lun; Pai, Yi-Hao; Lin, Gong-Ru // Applied Physics Letters;12/12/2011, Vol. 99 Issue 24, p243501 

    Carrier retention and recombination in Si quantum dots (Si-QDs) embedded SiNx light emitting diode with dark-yellow emission of 93 nW and linear P-I slope of 1.2 mW/A at 80 μA bias are compared. The capacitance-voltage hysteresis of <0.5 V reveals low carrier density per Si-QD, and the 1 ms...

  • Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3. Hoex, B.; Heil, S. B. S.; Langereis, E.; van de Sanden, M. C. M.; Kessels, W. M. M. // Applied Physics Letters;7/24/2006, Vol. 89 Issue 4, p042112 

    Excellent surface passivation of c-Si has been achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13 cm/s on low resistivity n- and p-type c-Si, respectively. These results obtained for ∼30 nm thick Al2O3...

  • Influence of high-temperature annealing on performance of edge-defined film-fed growth silicon ribbon solar cells. Kalejs, J. P.; Ladd, L. A. // Applied Physics Letters;1984, Vol. 45 Issue 5, p540 

    Silicon ribbon with varying oxygen concentrations grown by the edge-defined film-fed growth technique has been annealed for periods of up to 1 h at 1200 °C prior to fabrication into solar cells. Low (<1×1016 atom/cc interstitial) oxygen content ribbon cell performance, which is...

  • Luminescence properties of thin films prepared by laser ablation of Nd-doped potassium gadolinium tungstate. Atanasov, P.A.; Perea, A.; Jiménez de Castro, M.; Chaos, J.A.; Gonzalo, J.; Afonso, C.N.; Perrière, J. // Applied Physics A: Materials Science & Processing;2002, Vol. 74 Issue 1, p109 

    Optically active thin films on Si substrates have been produced by laser ablation of a Nd-doped potassium gadolinium tungstate (Nd:KGW) single crystal. Films grown at low oxygen pressures (<0.6 mbar) are potassium-deficient and appear to be mainly disordered. They show a poor photoluminescence...

  • Laser-assisted transfer of silicon by explosive hydrogen release. Toel, D.; Thompson, Michael O.; Smith, P.M.; Sigmon, T.W. // Applied Physics Letters;4/12/1999, Vol. 74 Issue 15, p2170 

    Features a technique for the transfer of silicon thin films through irradiating a hydrogenated amorphous silicon film deposited on a quartz substrate with an excimer laser pulse. Release and accumulation of hydrogen at the film/substrate interface generating pressures sufficient to propel the...

  • Pulsed laser-induced amorphization of silicon films. Sameshima, T.; Usui, S. // Journal of Applied Physics;8/1/1991, Vol. 70 Issue 3, p1281 

    Presents a study that investigated pulsed laser-induced amorphization of silicon films. Investigation of laser-induced amorphization; Hydrogenation of laser-amorphized film; Fabrication of thin-film transistors.

  • Measurement of interface strength by the modified laser spallation technique. III. Experimental optimization of the stress pulse. Yuan, J.; Gupta, V.; Pronin, A. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2405 

    Part III. Presents a study which achieved experimental optimization of the laser spallation technique by investigating the effect of the kind and thickness of the constraining materials and the energy-absorbing film on the amplitude and profile of the generated stress pulse. Details of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics