TITLE

Reversible neutralization of boron acceptors by hydrogen in Pd-SiO2-Si capacitors

AUTHOR(S)
Fare, T. L.; Lundstrom, I.; Zemel, J. N.; Feygenson, A.
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p632
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A palladium metal-silicon dioxide-silicon (Pd-MOS) capacitor is used to study the reversible injection and extraction of atomic hydrogen from a p-type implanted boron layer on an n-type (1016 phosphorus/cm3) substrate. 0.70±0.03 of the boron acceptors are deactivated by the hydrogen atoms diffusing from the Pd-SiO2 interface, on through the SiO2 and on into the silicon surface region. It is established that the atomic hydrogen can diffuse through a 10-nm-thick thermal SiO2 film. The isothermal uptake and release of atomic hydrogen in the silicon surface are demonstrated. The hydrogen data offer evidence that the boron acceptors and the phosphorus donors form a neutral complex during the processing of the ion implanted boron layer.
ACCESSION #
9819283

 

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