Photosensitive capacitance-voltage characteristics of molecular beam epitaxially grown GaAs/AlGaAs/GaAs heterostructures

Qian, Q-D.; Melloch, M. R.; Cooper, J. A.
March 1986
Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p638
Academic Journal
We report photosensitive capacitance-voltage characteristics of n+-GaAs/Al0.3Ga0.7As/p-GaAs heterostructures grown by molecular beam epitaxy. Inversion layers are observed due to minority charge retention in the triangular potential well at the AlGaAs/p-GaAs interface. Details of the device structure and experimental evaluation utilizing capacitance-voltage and current-voltage techniques are presented.


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