TITLE

Photosensitive capacitance-voltage characteristics of molecular beam epitaxially grown GaAs/AlGaAs/GaAs heterostructures

AUTHOR(S)
Qian, Q-D.; Melloch, M. R.; Cooper, J. A.
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p638
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report photosensitive capacitance-voltage characteristics of n+-GaAs/Al0.3Ga0.7As/p-GaAs heterostructures grown by molecular beam epitaxy. Inversion layers are observed due to minority charge retention in the triangular potential well at the AlGaAs/p-GaAs interface. Details of the device structure and experimental evaluation utilizing capacitance-voltage and current-voltage techniques are presented.
ACCESSION #
9819280

 

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