TITLE

Using focused ion beam damage patterns to photoelectrochemically etch features in III-V materials

AUTHOR(S)
Cummings, K. D.; Harriott, L. R.; Chi, G. C.; Ostermayer, F. W.
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p659
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5×109 ions/cm2 for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.
ACCESSION #
9819266

 

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