Threshold adjustments for complementary metal-oxide-semiconductor optimization using B and As focused ion beams

Lee, J. Y.; Kubena, R. L.
March 1986
Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p668
Academic Journal
Threshold adjustments have been performed on n- and p-channel metal-oxide-semiconductor (mos) field-effect transistors for complementary metal-oxide-semiconductor circuits using B and As focused ion beams (FIB’s). After conventional flood ion implantation for the wells and channels, additional selective threshold adjustment implants were made by FIB’s in 1×1012/cm2 increments. The threshold voltage shifts were 65 and 100 mV per each 1×1012/cm2 of FIB dose for PMOS and NMOS devices, respectively. Based on these results, precise tailoring of threshold values for optimal circuit performance appears practical.


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