TITLE

Development of preferentially current-generating silicon solar cells

AUTHOR(S)
Silard, Andrei; Pera, Florin; Nani, Gabriel
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p673
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The work reports the development of ‘‘preferentially current-generating’’ p+-n-n+ silicon solar cells. The distinctive trait of developed devices is their extremely large short-circuit current density Jsc=38–39.7 mA/cm2, which is the highest value of Jsc reported thus far in the literature for ‘‘back-surface-field’’-type cells under AM1 conditions. The conversion efficiency of test cells ranged from 17.1 to 18.15%. The results of this work show clearly that a simple, but adequately designed/processed p+-n-n+ cell fabricated in industrial environment on large area (2 in.) silicon wafers could possess parameters similar or superior to those of sophisticated laboratory samples elaborated on small area silicon chips.
ACCESSION #
9819256

 

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