TITLE

Control of a natural permeable CoSi2 base transistor

AUTHOR(S)
Tung, R. T.; Levi, A. F. J.; Gibson, J. M.
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p635
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report results on the fabrication of a natural permeable base transistor in a Si/CoSi2/Si heterostructure using molecular beam epitaxy (MBE). No photolithography is required, the transistor action being controlled by MBE growth conditions through the density and size of natural openings in the silicide base. The electrical characteristics of devices processed from such heterostructures are intimately related to the presence of these openings. Common base current gains in the range 0.01–0.95 have been observed and correlated with the size and density of the openings.
ACCESSION #
9819243

 

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