Lattice matching at elevated substrate temperature for growth of GaAs films with good electrical properties on CaxSr1-xF2/GaAs(100) structures

Tsutsui, K.; Ishiwara, H.; Furukawa, S.
March 1986
Applied Physics Letters;3/3/1986, Vol. 48 Issue 9, p587
Academic Journal
GaAs films were grown on CaxSr1-xF2/GaAs (100) structures by molecular beam epitaxy using a two-step growth technique and the effects of lattice mismatch between the GaAs and fluoride films at elevated temperature and room temperature were investigated. Electron Hall mobility measurements showed that the lattice matching at elevated temperature is more desirable for device applications.


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