TITLE

Lattice matching at elevated substrate temperature for growth of GaAs films with good electrical properties on CaxSr1-xF2/GaAs(100) structures

AUTHOR(S)
Tsutsui, K.; Ishiwara, H.; Furukawa, S.
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/3/1986, Vol. 48 Issue 9, p587
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs films were grown on CaxSr1-xF2/GaAs (100) structures by molecular beam epitaxy using a two-step growth technique and the effects of lattice mismatch between the GaAs and fluoride films at elevated temperature and room temperature were investigated. Electron Hall mobility measurements showed that the lattice matching at elevated temperature is more desirable for device applications.
ACCESSION #
9819219

 

Related Articles

  • Inhomogeneous lattice distortion in the heteroepitaxy of InAs on GaAs. Munekata, H.; Segmüller, Armin; Chang, L. L. // Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p587 

    Lattice relaxation in InAs epitaxial films, grown by molecular beam epitaxy on GaAs, has been studied by grazing-incidence x-ray diffraction, supplemented by in situ reflection electron diffraction. Inhomogeneous lattice distortion has been found in that the films consist of weakly and strongly...

  • Photocapacitance study of bulk beep levels in ZnSe grown by molecular-beam epitaxy. Hierro, A.; Kwon, D. // Journal of Applied Physics;1/15/2000, Vol. 87 Issue 2, p730 

    Presents information on a study which investigated the influence of initial growth conditions and lattice matching on the deep level spectrum of zinc selenide grown on gallium arsenide by molecular beam epitaxy. Experimental and analysis procedures; Results and discussion; Conclusions.

  • Crystalline defects in heteroepitaxial GaAs/(Ca,Sr)F2 grown by molecular-beam epitaxy. Fontaine, C.; Munoz-Yague, A.; Heral, H.; Bernard, L.; Rocher, A. // Journal of Applied Physics;4/15/1987, Vol. 61 Issue 8, p2807 

    Provides information on a study which detailed the crystallinity of gallium arsenide(GaAs)/(calcium, strontium) fluoride structures grown by molecular-beam epitaxy on (100) and (111) B-oriented GaAs substrates by transmission electron microscopy. Defects found in the GaAs heteroepitaxial...

  • Sulfide Passivating Coatings on GaAs(100) Surface under Conditions of MBE Growth of /GaAs. Sedova, I. V.; L’vova, T. V.; Ulin, V. P.; Sorokin, S. V.; Ankudinov, A. V.; Berkovits, V. L.; Ivanov, S. V.; Kop’ev, P. S. // Semiconductors;Jan2002, Vol. 36 Issue 1, p54 

    Atomic-force microscopy was applied to compare the topographies of naturally oxidized surfaces of GaAs(100) substrates and those substrates treated with aqueous solutions of sodium sulfide in various stages of their preparation for growth of ZnSe-based heterostructures by molecular beam epitaxy...

  • Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 degrees C. Eaglesham, D.J.; Pfeiffer, L.N.; West, K.W.; Dykaar, D.R. // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p65 

    Studies the low-temperature limit to gallium arsenide (GaAs) molecular beam epitaxy. Use of transmission electron microscopy of layers grown under a variety of conditions; Temperature, growth rate, composition and defect density during the growth of the epitaxial layer.

  • Realization of low facet density and the growth mechanism of GaAs on GaAs(110) by... Lopez, M.; Takano, Y.; Pak, K.; Yonezu, H. // Applied Physics Letters;2/11/1991, Vol. 58 Issue 6, p580 

    Reports on the successful growth of smooth gallium arsenide (GaAs) layers by migration-enhanced epitaxy on exactly oriented substrates. Complete coverage by facets of the surface of layers grown by conventional molecular beam epitaxy; Reduction of facet density by three orders of magnitude...

  • Growth and structural characterization of embedded InAsSb on GaAs-coated patterned... De Boeck, J.; Dobbelaere, W.; Vanhellemont, J.; Mertens, R.; Borghs, G. // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p928 

    Investigates the molecular beam epitaxial growth of InAsSb on gallium arsenide (GaAs)-coated patterned silicon (Si) substrates. Comparison of the InAsSb epilayer morphology for different substrate conditions; Threaded defect density of the InAsSb layers; Evidence of a regular array of misfit...

  • X-ray analysis of GaAs layers on GaAs(001) and GaAs(111)B surfaces grown at low temperatures by... Capano, M.A.; Yen, M.Y.; Eyink, K.G.; Haas, T.W. // Applied Physics Letters;4/29/1991, Vol. 58 Issue 17, p1854 

    Reports on the simultaneous molecular beam epitaxy growth of GaAs on GaAs(001) and GaAs(111)B substrates at low temperatures. Assessment of the crystallinity of the low-temperature GaAs layers using a double-crystal x-ray diffractometer.

  • Comparison of As species (As[sub 4] and As[sub 2]) in molecular beam epitaxial growth of.... Hayakawa, T.; Morishima, M.; Nagai, M.; Horie, H.; Matsumoto, K. // Applied Physics Letters;11/4/1991, Vol. 59 Issue 19, p2415 

    Examines the basic properties of Al[sub x]Ga[sub 1-x]As grown by molecular beam epitaxy. Dependence of the forbidden growth temperature region on arsenide species and aluminum arsenide mole fraction; Measurement of deep level transient spectroscopy; Presence of electron traps in the layers...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics