Structure and bonding at the CaF2/Si (111) interface

Himpsel, F. J.; Hillebrecht, F. U.; Hughes, G.; Jordan, J. L.; Karlsson, U. O.; McFeely, F. R.; Morar, J. F.; Rieger, D.
March 1986
Applied Physics Letters;3/3/1986, Vol. 48 Issue 9, p596
Academic Journal
High resolution core level spectroscopy with synchrotron radiation is used to determine the bonding at the epitaxial CaF2/Si (111) interface. It is found that both Ca and F bond to Si at the interface inducing core level shifts of +0.4 eV and -0.8 eV, respectively. Structural models with an atomically sharp interface are proposed where Ca bonds to the first layer Si and F to the second layer.


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