TITLE

Continuous wave operation (77 K) of yellow (583.6 nm) emitting AlGaInP double heterostructure laser diodes

AUTHOR(S)
Hino, Isao; Kawata, Seiji; Gomyo, Akiko; Kobayashi, Kenichi; Suzuki, Tohru
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/3/1986, Vol. 48 Issue 9, p557
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm2). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.
ACCESSION #
9819200

 

Related Articles

  • Semi-insulating current blocking property simulations for buried heterostructure laser diodes. Asada, S.; Sugou, S.; Kasahara, K.; Kato, Y.; Kumashiro, S. // Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p703 

    A compound-semiconductor device simulator, in which deep levels in the semi-insulating layers can be taken into account, has been developed. By using this simulator, the electrical properties for the semi-insulating InP buried heterostructure laser diodes were investigated. The leakage current,...

  • Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature. Broekaert, Tom P. E.; Lee, Wai; Fonstad, Clifton G. // Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1545 

    Pseudomorphic In0.53 Ga0.47 As/AlAs/InAs resonant tunneling diodes have been grown on InP substrates by molecular beam epitaxy. Peak-to-valley current ratios as high as 30 at 300 K and 63 at 77 K are obtained on a structure with barriers of ten atomic layers AlAs, and a well consisting of three...

  • Monolithic two-dimensional arrays of high-power GaInAsP/InP surface-emitting diode lasers. Walpole, J. N.; Liau, Z. L. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1636 

    Two-dimensional arrays of 16 laser elements have been fabricated using the mass transport process. Good uniformity, low threshold current (typically 11–14 mA per element), and high total cw power (up to 0.27 W at 22 °C) were obtained.

  • Diffraction-limited-beam, high-power operation from X-junction coupled phase-locked arrays of AlGaAs/GaAs diode lasers. Botez, D.; Hayashida, P.; Mawst, L. J.; Roth, T. J. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1366 

    A novel type of phase-locked array is demonstrated. The device is a ten-element AlGaAs/GaAs array with both evanescent wave coupling as well as coupling via X-type junctions. The array selects and maintains operation in the highest order array mode of a ten-element device: mode L=10. Threshold...

  • Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer. Tanaka, T.; Minagawa, S.; Kajimura, T. // Applied Physics Letters;4/10/1989, Vol. 54 Issue 15, p1391 

    Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers fabricated using a thin GaAs layer as an etch stop are reproducibly realized. The ridge stripe structure is fabricated utilizing the large difference in etching rates between GaAs/AlGaAs and AlGaInP layers. As a result, the...

  • Al[sub 0.95]Ga[sub 0.05]As[sub 0.56]Sb[sub 0.44] for lateral oxide-confinement layer in InP-based devices. Reddy, M. H. M.; Buell, D. A.; Huntington, A. S.; Asano, T.; Koda, R.; Feezell, D.; Lofgreen, D.; Coldren, L. A. // Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1329 

    We report a lateral oxide-confinement layer for InP-based devices using lattice-matched AlGaAsSb. The confinement-layer-induced excess loss at different widths was extracted after de-embedding the losses due to carrier diffusion, nonradiative recombination, and changes in internal injection...

  • High-reliability silicon microchannel submount for high average power laser diode arrays. Beach, R.; Mundinger, D.; Benett, W.; Sperry, V.; Comaskey, B.; Solarz, R. // Applied Physics Letters;5/21/1990, Vol. 56 Issue 21, p2065 

    A simple and highly reliable package consisting of a 1-cm-long AlGaAs laser diode array mounted directly on a silicon microchannel cooler has been demonstrated. 3.4×109 shots were logged on this device at an average optical output of 8.75 W with only a 6% increase in current required to hold...

  • InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (? = 3.0�3.3�m) for Diode Laser Spectroscopy. Aidaraliev, M.; Beyer, T.; Zotova, N. V.; Karandashev, S. A.; Matveev, B. A.; Remennyi, M. A.; Stus�, N. M.; Talalakin, G. N. // Semiconductors;Jul2000, Vol. 34 Issue 7, p848 

    Data on threshold currents, the differential quantum efficiency, the emission spectrum, current tuning, and radiation power of mesastripe InGaAsSb(Gd)/InAsSbP double heterostructure lasers with ? = 3.0-3.3 �m and a cavity length of 70-150 �m in a temperature range of 50-107 K are...

  • Air layers boost cavity mirror efficiency. Wallace, John // Laser Focus World;Feb2003, Vol. 39 Issue 2, p29 

    Reports on the method in making emitting vertical-cavity surface-emitting lasers (VCSEL). Fabrication of indium phosphide-based VCSEL with mirrors; Problem in creating longwave VCSEL.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics