TITLE

Novel Landau level laser in the quantum Hall regime

AUTHOR(S)
Aoki, H.
PUB. DATE
March 1986
SOURCE
Applied Physics Letters;3/3/1986, Vol. 48 Issue 9, p559
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel laser is proposed for the two-dimensional electrons in semiconductor heterostructures in strong magnetic fields. The laser operates under the two-dimensional Landau quantization with population inversion in the Landau levels. The laser frequency, which is directly tunable by the magnitude of the external magnetic field (H), falls on the far infrared for H∼1 T.
ACCESSION #
9819199

 

Related Articles

  • Microwaves Induce Vanishing Resistance in Two-Dimensional Electron Systems. Fitzgerald, Richard // Physics Today;Apr2003, Vol. 56 Issue 4, p24 

    Discusses the resistance of a two-dimensional semiconductor at modest magnetic fields and microwave excitations. Information on Landau-level quantization; Effect of microwave irradiation on low-field resistance; Temperature dependence of the oscillations.

  • Inter-Landau Level Scattering Processes in Magnetic Field Assisted THz Quantum Cascade Laser. RADOVANOVIĆ, J.; DANICIĆ, A.; MILANOVIĆ, V.; INDJIN, D.; IKONIC, Z. // Acta Physica Polonica, A.;Aug2011, Vol. 120 Issue 2, p227 

    We present a detailed analysis of GaAs/AlGaAs terahertz quantum cascade laser in the presence of an intense external magnetic field. One of the objectives in further development of THz quantum cascade laser is the realization of structures operating at higher temperatures. This is difficult to...

  • Inter-Landau level scattering and LO-phonon emission in terahertz quantum cascade laser. Péré-Laperne, N.; de Vaulchier, L. A.; Guldner, Y.; Bastard, G.; Scalari, G.; Giovannini, M.; Faist, J.; Vasanelli, A.; Dhillon, S.; Sirtori, C. // Applied Physics Letters;8/6/2007, Vol. 91 Issue 6, p062102 

    A terahertz quantum cascade laser (QCL) structure based on a bound to continuum and LO-phonon extraction stage is studied under a strong magnetic field. Two series of power oscillations as a function of magnetic field are observed. Comprehensive simulations of the lifetimes allow the first...

  • ELECTRON AND HOLE EFFECTIVE g FACTORS IN InAs/GaSb QUANTUM WELLS. Zakharova, A.; Yen, S.T.; Chao, K.A. // International Journal of Nanoscience;Dec2003, Vol. 2 Issue 6, p437 

    We investigate the Landau level structures and the electron and hole effective g factors in InAs/GaSb quantum wells under electric and quantizing magnetic fields perpendicular to interfaces. In these structures, the lowest electron level in InAs can be below the highest heavy-hole level in GaSb...

  • The Peierls Substitution and the Vanishing Magnetic Field Limit. Ouvry, Stéphane // International Journal of Modern Physics B: Condensed Matter Phys;6/20/2002, Vol. 16 Issue 14/15, p2065 

    In order to achieve in configuration space a dimensional reduction from dimension two to dimension one, the lowest Landau level (LLL) projection, also called the Peierls substitution, is not sufficient. One has also, once in the LLL, to take the vanishing magnetic field limit.

  • Magnetic-field assisted performance of InGaAs/GaAsSb terahertz quantum cascade lasers. Maëro, Simon; de Vaulchier, Louis-Anne; Guldner, Yves; Deutsch, Christoph; Krall, Michael; Zederbauer, Tobias; Strasser, Gottfried; Unterrainer, Karl // Applied Physics Letters;7/29/2013, Vol. 103 Issue 5, p051116 

    We report on a magnetic-field investigation of a In0.53Ga0.47As/GaAs0.51Sb0.49 terahertz quantum cascade laser. Owing to the suppression of inter-Landau level non-radiative scattering, the device performances are strongly improved at high magnetic field. Working temperature up to 190 K and...

  • Quantum Transport and Cyclotron Resonance Study of Ge/SiGe Quantum Wells in High Magnetic Fields. Miura, N.; Kozlova, N. V.; D�rr, K.; Freudenberger, J.; Schultz, L.; Drachenko, O.; Sawano, K.; Shiraki, Y. // Journal of Low Temperature Physics;Apr2010, Vol. 159 Issue 1/2, p222 

    Shubnikov-de Haas oscillation and cyclotron resonance were studied for high mobility p-type Ge channels in strained Ge/Si1- xGe x quantum wells, using pulsed high magnetic fields up to 50 T. Fine quantum oscillations were observed in ? xx. Reflecting the complex Landau level structure in the...

  • Band Edge Energies Pinning in Magnetic Field in Semimagnetic Cd0:7Mn0:3Te. Barauskaitė, L.; Brazis, R.; Ivanov, V.; Godlewski, M. // Acta Physica Polonica, A.;Dec2011, Vol. 120 Issue 6, p1056 

    Results of Cd0:7Mn0:3Te magneto-photoluminescence investigations are analyzed. Photoluminescence was measured in a Voigt geometry at the temperature of 1.6 K. Two models describing radiative transition energy are compared with the experimental results of Cd0:7Mn0:3Te luminescence. The energy of...

  • Photocurrent Properties of Nanostructered ZnO/SiO2/Si Photodiodes in Magnetic Fields. Lung-Chien Chen; Ching-Ho Tien // Current Nanoscience;Aug2010, Vol. 6 Issue 4, p397 

    This study examines the optoelectronic characteristics and carrier transport model of a nanostructure p-ZnO/SiO2 ultrathin interlayer/n-Si photodiode in various magnetic fields. The magneto-induced current in photodiode increases exponentially as the reverse bias and illumination flux increases....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics