Ion channeling through a thin Si-liquid interface

Padmanabhan, K. R.; Drallos, P. J.; Alexander, R. B.; Buchholz, J. C.
March 1986
Applied Physics Letters;3/3/1986, Vol. 48 Issue 9, p578
Academic Journal
The feasibility of ion channeling through the wall of a thin Si-liquid cell has been investigated. We have shown experimentally that it is possible to channel ions through a thin Si-liquid interface. With water the channeling minimum yield is 0.45 at the interface. This is higher than that required for application of this technique to gain structural information at the solid-liquid interfaces. It is also higher than that required for the determination of preferred positions of deposited impurity atoms at the interface.


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