Origin of the main deep electron trap in electron irradiated InP

Sibille, Alain
March 1986
Applied Physics Letters;3/3/1986, Vol. 48 Issue 9, p593
Academic Journal
The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p+n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P).


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