Oxygen-rich polycrystalline magnesium oxide—A high quality thin-film dielectric

Hebard, A. F.; Fiory, A. T.; Nakahara, S.; Eick, R. H.
February 1986
Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p520
Academic Journal
Sputtering of a magnesium target with a beam of argon ions in the presence of a partial pressure of reactive oxygen gas has been found to yield smooth MgOx thin-film dielectrics with low electrical loss, good mechanical stability, and excellent reproducibility. The films consist of polycrystalline MgO with a grain size <=50 Ã… and an OH-containing component. The thickness dependence of the areal capacitance is discussed in the context of a two-layer model in which this oxygen-rich phase (x[bar_over_tilde:_approx._equal_to]1.4) overlays a thin (<=40 Ã…) stoichiometric phase (x[bar_over_tilde:_approx._equal_to]1.0). Observation of superconducting tunneling characteristics in trilayer Au-MgOx-Pb structures confirms pinhole-free coverage which may have possible application as artificial tunnel barriers.


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