TITLE

Oxygen-rich polycrystalline magnesium oxide—A high quality thin-film dielectric

AUTHOR(S)
Hebard, A. F.; Fiory, A. T.; Nakahara, S.; Eick, R. H.
PUB. DATE
February 1986
SOURCE
Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p520
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Sputtering of a magnesium target with a beam of argon ions in the presence of a partial pressure of reactive oxygen gas has been found to yield smooth MgOx thin-film dielectrics with low electrical loss, good mechanical stability, and excellent reproducibility. The films consist of polycrystalline MgO with a grain size <=50 Ã… and an OH-containing component. The thickness dependence of the areal capacitance is discussed in the context of a two-layer model in which this oxygen-rich phase (x[bar_over_tilde:_approx._equal_to]1.4) overlays a thin (<=40 Ã…) stoichiometric phase (x[bar_over_tilde:_approx._equal_to]1.0). Observation of superconducting tunneling characteristics in trilayer Au-MgOx-Pb structures confirms pinhole-free coverage which may have possible application as artificial tunnel barriers.
ACCESSION #
9819181

 

Related Articles

  • Study of parallel and perpendicular exchange biases in FePt–FeMn multilayers. Phuoc, Nguyen N.; Suzuki, Takao // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08C107 

    A systematic investigation of parallel and perpendicular exchange biases in [FePt/FeMn]10 multilayers deposited onto MgO(100) substrates by ion beam sputter-deposition system is performed. The thickness (FeMn) dependences of exchange bias field and blocking temperature are discussed. The...

  • Ion-beam-assisted deposition of ferroelectric PbTiO3 films. Qu, B. D.; Zhong, W. L.; Wang, K. M.; Zhang, P. L.; Wang, Z. L.; Li, W. Z. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2896 

    Reports on the introduction of ion-beam-assisted deposition into an ion-beam sputtering system to deposit ferroelectric PbTiO[sub3] films. Film composition; Method used to analyze the structure of the films; Information on the dielectric and ferroelectric properties.

  • Sputtering of A[sup 3]B[sup 5] Materials (GaP, GaAs, GaSb, InP, and InSb) by 2- to 14-keV N[sup +][sub 2] Ions. Soshnikov, I. P.; Bert, N. A. // Technical Physics;Sep2000, Vol. 45 Issue 9, p1201 

    Investigations of the general characteristics and distinctive features of sputtering ofA[sup 3]B[sup 5] materials (GAP, GaAs, GaSb, InP and InSb) under bombardment with N[sup +, sub 2] ions have been carried out. From the experi- mental data, dependences of the sputtering yield of these...

  • Effect of surface roughness on the secondary ion yield in ion sputtering. Makeev, Maxim A.; Baraba´si, Albert-La´szlo´ // Applied Physics Letters;10/12/1998, Vol. 73 Issue 15 

    There is extensive experimental evidence that, at low temperatures, surface erosion by ion bombardment roughens the sputtered substrate, leading to a self-affine surface. These changes in the surface morphology also modify the secondary ion yield. Here, we calculate analytically the secondary...

  • Ion-Beam Modification of Track Membrane Surface. Pronin, V. A.; Gornov, V. N.; Lipin, A. V.; Loboda, P. A.; Mchedlishvili, B. V.; Nechaev, A. N.; Sergeev, A. V. // Technical Physics;Nov2001, Vol. 46 Issue 11, p1444 

    An ion-beam method to modify the track membrane surface is suggested. An ion gun based on a magnetron sputterer is developed. This gun provides ion energies in the range of 5 eV-1 keV, ion current density up to 0.8 mA/cm², and an ion beam aperture of 90 mm. After the track membrane surface...

  • Sputtering Characteristics of Fullerene C[sub 60] Films under Bombardment with 0.1–1-keV Argon Ions and Atoms. Soshnikov, I. P.; Lunev, A. V.; Gaevskiı, M. É.; Rotkina, L. G.; Barchenko, V. T. // Technical Physics;Jun2000, Vol. 45 Issue 6, p766 

    The sputtering of fullerene C[sub 60] films under bombardment with Ar[sup +] ions was studied. In thin films, blistering effects related to diffusion of the implanted argon ions along the layer and substrate interface have been found to occur. A threshold behavior was observed for sputtering at...

  • Sputtering and thermal effect during ion microbeam patterning of polymeric films. Ektessabi, A. M.; Sano, T. // Review of Scientific Instruments;Feb2000, Vol. 71 Issue 2, p1012 

    Investigates the machinability of polymers and the main parameters involved during ion microbeam processing of polymers. Simulation of basic physical phenomena during microion beam processing; Collisional and sputtering effects; Thermal effect and heat distribution.

  • Nanoscale effects in focused ion beam processing. Frey, L.; Lehrer, C.; Ryssel, H. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 7, p1017 

    Focused ion beams with diameters of 8 to 50 nm are used for material processing in the nanoscale regime. In this paper, effects of the ion beam–solid interaction determining the formation of small structures by ion-beam sputtering and chemically assisted material deposition and etching...

  • Novel geometrical effects observed in debris when polymers are laser sputtered. Miotello, Antonio; Kelly, Roger // Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2784 

    Studies the observed novel geometrical effects in debris during polymer laser sputtering. Variation of responses in polymer sputtering; Deposition of debris around the bombarded spot; Conclusion on the debris phenomenon; Elimination of debris through gas-dynamics; Methods proposed for...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics