TITLE

Characteristics of CdTe grown on Si by low pressure metalorganic chemical vapor deposition

AUTHOR(S)
Chou, Rey-Lin; Lin, Min-Shyong; Chou, Kan-Sen
PUB. DATE
February 1986
SOURCE
Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p523
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Specular CdTe epitaxial layers have been grown on (100) Si substrates by the low pressure metalorganic chemical vapor deposition method with dimethylcadmium (DMCd) and diethyltelluride (DETe) source materials. Auger electron spectroscopy and scanning electron microscopy have been used to demonstrate the uniform composition, good surface morphology, and abrupt interface between the CdTe layer and the silicon substrate. The dominant sharp bound exciton related emission peak at 1.593 eV and the weak defect related extrinsic band at 1.483 eV were observed in the 14 K photoluminescence spectra, demonstrating that high quality CdTe epitaxial layers can be grown on Si at 375 °C with the DMCd/DETe mole ratio at approximate unity.
ACCESSION #
9819176

 

Related Articles

  • Growth of CdZnTe on Si by low-pressure chemical vapor deposition. Goela, Jitendra S.; Taylor, Raymond L. // Applied Physics Letters;9/21/1987, Vol. 51 Issue 12, p928 

    Epitaxial layers of Cd1-xZnxTe (0.04≤x≤0.62) have been grown on (100) and (111) silicon substrates by a low-pressure chemical vapor deposition (LPCVD) process. Elemental metals were used as sources of cadmium and zinc and dimethyltelluride was used as a source of tellurium. The...

  • Influence of growth conditions on the incorporation of substitutional C in Si[sub 1-x-y] Ge[sub x] C[sub y] alloy on Si by chemical vapor deposition using C[sub 2] H[sub 4]. Jiang, N.; Zang, L.; Jiang, R.L.; Zhu, S.M.; Han, P.; Liu, X.B.; Cheng, X.M.; Wang, R.H.; Zheng, Y.D.; Hu, X.N.; Fang, J.X. // Applied Physics A: Materials Science & Processing;1999, Vol. 68 Issue 4, p457 

    Abstract. Thin heteroepitaxial films of Si[sub 1-x-y]Ge[sub x]C[sub y] have been grown on Si(100) substrates by rapid thermal chemical vapor deposition (RTCVD) using C[sub 2]H[sub 4] as C source. The composition and microstructure of Si[sub 1-x-y]Ge[sub x]C[sub y] films were characterized by...

  • Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation. Arnault, J. C.; Intiso, L.; Saada, S.; Delclos, S.; Bergonzo, P.; Polini, R. // Applied Physics Letters;1/22/2007, Vol. 90 Issue 4, p044101 

    Two 3C-SiC(100) reconstructed surfaces have been exposed to bias enhanced nucleation (BEN) treatments performed in a microwave plasma chemical vapor deposition reactor. For both BEN steps, a significant enhancement of the diamond nucleation density has been observed on the initial C-terminated...

  • Cadmium Telluride Growth on Patterned Substrates for Mercury Cadmium Telluride Infrared Detectors. Bommena, R.; Fulk, C.; Zhao, Jun; Lee, T. S.; Sivananthan, S.; Brueck, S. R. J.; Hersee, S. D. // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p704 

    Patterned silicon-on-insulator (SOI) substrates have been proposed to grow low defect density CdTe. The CdTe epilayers so obtained will enable the growth of good-quality mercury cadmium telluride (HgCdTe) layers subsequently. This would increase the scope for better performance of infrared...

  • Efficient generation of 480 fs electrical pulses on transmission lines by photoconductive switching in metalorganic chemical vapor deposited CdTe. Nuss, Martin C.; Kisker, D. W.; Smith, P. R.; Harvey, T. E. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p57 

    We have generated electrical pulses of only 480 fs duration by photoconductive switching in CdTe grown by ultraviolet-enhanced metalorganic chemical vapor deposition (MOCVD). In addition to the extremely fast switching times, MOCVD CdTe also exhibits a high mobility of 180 cm2/V s and can be...

  • Effect of growth conditions on crystalline quality of metalorganic chemical vapor deposition.... Khanin, E.; Amir, N. // Applied Physics Letters;5/22/1995, Vol. 66 Issue 21, p2873 

    Examines the effect of growth conditions on the crystalline quality of cadmium telluride (CdTe) (111)B epilayers grown by metalorganic chemical vapor deposition technique. Analysis of the crystalline quality of the epilayer; Use of double crystal rocking curve and Laue x-ray diffraction...

  • Photochemical vapor deposition of hydrogenated amorphous silicon films from disilane and trisilane using a low pressure mercury lamp. Kumata, Ken; Itoh, Uichi; Toyoshima, Yasutake; Tanaka, Naoki; Anzai, Hiroyuki; Matsuda, Akihisa // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1380 

    The photolysis of disilane (Si2H6) and trisilane (Si3H8) under direct excitation by light from a low pressure mercury lamp was carried out to prepare hydrogenated amorphous silicon films (a-Si:H). The electronic and optical properties of the films were investigated as functions of preparation...

  • Structure and Properties of a-Si:H Films Grown by Cyclic Deposition. Afanas�ev, V. P.; Gudovskikh, A. S.; Kon�kov, O. I.; Kazanin, M. M.; Kougiya, K. V.; Sazanov, A. P.; Trapeznikova, I. N.; Terukov, E. I. // Semiconductors;Apr2000, Vol. 34 Issue 4, p477 

    Amorphous hydrogenated silicon films obtained by cyclic deposition with intermediate annealing in hydrogen plasma were studied, a-Si:H films deposited under optimal conditions are photosensitive (photoconductivity to dark conductivity ratio s[sub ph]/s[sub d] is as high as 10[sup 7] under 20 mW...

  • Growth of high quality, large grain size, highly oriented diamond on Si (100). Janischowsky, K.; Stammler, M. // Applied Physics Letters;10/4/1999, Vol. 75 Issue 14, p2094 

    Discusses the growth of high quality, large grain size, highly oriented diamond films on silicon (100) through microwave and hot filament chemical vapor deposition processes. .Closely packed crystallites with (100) surfaces yielded by the sequential growth process; Similarity in the orientation...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics