TITLE

Staggered band alignments in AlGaAs heterojunctions and the determination of valence-band offsets

AUTHOR(S)
Dawson, P.; Wilson, B. A.; Tu, C. W.; Miller, R. C.
PUB. DATE
February 1986
SOURCE
Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p541
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence spectra from Al0.37Ga0.63As/AlAs multiple quantum well structures with staggered band alignments are presented which provide the first direct optical measure of the valence-band offset at a semiconductor heterojunction. The experiment takes advantage of the crossover occurring at a critical aluminum concentration above which the indirect X minima in the AlAs become the lowest energy conduction bands in the system, and recombination occurs across the interface. The resulting emission fixes the valence-band offset at ΔEv =342±4 meV for this structure.
ACCESSION #
9819165

 

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