TITLE

High mobility GaAs layers obtained by open tube sulfur diffusion

AUTHOR(S)
Prince, F. C.; Oren, M.; Lam, M.
PUB. DATE
February 1986
SOURCE
Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p546
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new technique to diffuse sulfur in GaAs has been demonstrated. The diffusion is performed on a 2-in. liquid encapsulated Czochralski GaAs wafer in an open tube furnace under N2 flow. A graphite assembly is used to keep the diffusion source and the wafer in close proximity. Diffusion at 850 °C for 30 min gave a sheet carrier concentration of 8.2×1012 cm-2, average mobility of 4200 cm2/V s, and sheet resistance of 180 Ω/[Laplacian_variant]. Sheet resistance uniformity is about ±5%. Transconductances as high as 200 mS/mm have been measured on metal-semiconductor field-effect transistors with 2 μm gate length, fabricated on layers diffused by this technique.
ACCESSION #
9819161

 

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